参数资料
型号: RGP02-20EHE3/54
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 67K
描述: DIODE GPP 0.5A 2000V 300NS DO-41
标准包装: 5,500
二极管类型: 标准
电压 - (Vr)(最大): 2000V(2kV)
电流 - 平均整流 (Io): 500mA
电压 - 在 If 时为正向 (Vf)(最大): 1.8V @ 100mA
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 300ns
电流 - 在 Vr 时反向漏电: 5µA @ 2000V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 带卷 (TR)
‘lllvVISHAYQV
5:
0.01
lnslanlaneous Forward Current (A)
0.5 1.0
wwwymhaycom
RGP02-xxE
Vishay General Semiconductor
Pulse Width : 300 Us1 % Duty cycie
Junction Capacitance (pF)
1.4 16 1.5 20 2.2 2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous FonNard Characteristics
100
0
0.1
instantaneous Reverse Current (HA)
Percent of Rated Peak Reverse Voltage (‘7/n)
Fig. 4 - Typical Reverse Characteristics
PACKAGE ouTLINE DIMENSIONS in inches (millimeters)
Revision: 11-Dec-13
Do_2o4AL (Do_41)
(1
1.0 (25 4)MIN.
0.107 (2 7) *l V7 i0.205 (5.21
DIA
0.160 (4.11
I n (25.4)
MIN.
0 026 (0.66)
0 023 (0.53) ’ i
DIA.
3
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Document N umber: 88699
For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
PDF描述
RGP10MEHE3/73 DIODE GPP 1A 1000V 500NS DO-41
RGP10M DIODE GPP FAST 1A 1000V DO-41
RGP25MHE3/54 DIODE 2.5A 1000V 500NS DO-201AD
RHRD660S9A_F085 DIODE HYPERFAST 600V 6A DPAK
RHRD660S9A_NL DIODE HYPERFAST 600V 6A DPAK
相关代理商/技术参数
参数描述
RGP02-20EZ 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:FAST RECOVERY RECTIFIER
RGP02-8E 制造商:FCI 制造商全称:First Components International 功能描述:0.5 Amp FAST SWITCHING MEGARECTIFIERS
RGP0670-K 制造商:Panasonic Industrial Company 功能描述:GRILLE
RGP0784D-S 制造商:Panasonic Industrial Company 功能描述:PANEL
RGP0784J-S 制造商:Panasonic Industrial Company 功能描述:FRONT PANEL