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参数资料
| 型号： | RH935B-2%E3TR |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 9.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| 封装： | ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 135K |
9.0 Volt Temperature Compensated Zener
Reference Diodes
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N935 thru 1N940B-1, e3
1N935
-
1N940B-1,
e3
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
ZENER
VOLTAGE
VZ @ IZT
(Notes
1, 4 & 5)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
(Note 2)
ZZT @ IZT
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
VOLTAGE
TEMPERATURE
STABILITY
(Notes 3 & 4)
ΔVZT
MAXIMUM
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COEFFICIENT
αVZ
JEDEC
TYPE
NUMBERS
(Notes
1 & 5)
VOLTS
mA
OHMS
μA
mV
oC
%/
oC
1N935
1N935A
1N935B
8.55-9.45
7.5
20
10
67
139
184
0 to +75
-55 to +100
-55 to +150
0.01
1N936
1N936A
1N936B
8.55-9.45
7.5
20
10
33
69
92
0 to +75
-55 to +100
-55 to +150
0.005
1N937
1N937A
1N937B
8.55-9.45
7.5
20
10
13
27
37
0 to +75
-55 to +100
-55 to +150
0.002
1N938
1N938A
1N938B
8.55-9.45
7.5
20
10
6
13
18
0 to +75
-55 to +100
-55 to +150
0.001
1N939
1N939A
1N939B
8.55-9.45
7.5
20
10
3
7
9
0 to +75
-55 to +100
-55 to +150
0.0005
1N940
1N940A
1N940B
8.55-9.45
7.5
20
10
1.3
2.7
3.7
0 to +75
-55 to +100
-55 to +150
0.0002
*JEDEC Registered Data.
NOTES:
1
. When ordering devices with tighter tolerances than specified, use a nominal voltage of 9.2V and add a hyphenated suffix
to the part number for desired tolerance at the end of the part number, e.g. 1N938B-2%, 1N939B-1%, 1N939B-1-1%, etc.
2.
Measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25
oC.
3.
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the established limits.
4.
Voltage measurements to be performed 15 seconds after application of dc current.
5.
The 1N935B, 937B, 938B, 939B, 940B also have military qualification to MIL-PRF-19500/156 up to the JANTXV level by
adding JAN, JANTX, or JANTXV prefixes to part numbers as well as “-1” suffix, e.g. JANTX1N938B-1, etc.
6.
Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH938A instead of 1N938A.
GRAPHS
Change
in
tempe
rature
coefficient
(mV/
o C)
Microsemi
Scottsdale Division
Page 2
Copyright
2005
7-18-2005 REV B
IZ – Operating Current (mA)
Change
in
tempe
rature
coefficient
(%/
o C)
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 7.5mA.
EXAMPLE: A diode in this series is operated at a current of
7.5mA and has specified Temperature Coefficient (TC) limits of +/-
0.005%/
oC. To obtain the typical Temperature Coefficient limits for
this same diode operated at a current of 6.0mA, the new TC limits
(%/
oC) can be estimated using the graph in FIGURE 1.
At a test current of 6.0mA the change in Temperature Coefficient
(TC) is approximately –0.0009%.
oC. The algebraic sum of +/-
0.005%
oC and –0.0009%/oC gives the new estimated limits of
+0.0041%/oC and -0.0059%/oC.
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT.
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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PDF描述 |
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| RH935BE3TR | 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| RH936ATR | 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
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| RH937B-1E3 | 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| RH939A-1-2%E3TR | 9.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RH9711 | 制造商:Thomas & Betts 功能描述:Ring Tongue Terminal 54.35mm 19.55mm Electro-Tin |
| RH9731 | 制造商:Thomas & Betts 功能描述:Ring Tongue Terminal 54.35mm 19.55mm Electro-Tin |
| RH9731U | 制造商:Thomas & Betts 功能描述:Ring Tongue Terminal 54.35mm 19.55mm Electro-Tin |
| RH9751 | 制造商:Thomas & Betts 功能描述:Ring Tongue Terminal 59.43mm 19.55mm Electro-Tin |
| RHA071880410 | 制造商:Amphenol Canada 功能描述:- Trays |
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