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参数资料
| 型号： | RJK4014DPK-00-T0 |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道场效应晶体管高速电源开关 |
| 文件页数： | 2/4页 |
| 文件大小： | 80K |
| 代理商： | RJK4014DPK-00-T0 |
RJK4014DPK
REJ03G1576-0100 Rev.1.00 Aug 08, 2007
Page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Min
400
—
—
3.0
—
Typ
—
—
—
—
0.20
Max
—
1
±0.1
4.5
0.24
Unit
V
μ
A
μ
A
V
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 12 A, V
GS
= 10 V
Note4
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
—
—
—
—
—
—
—
—
—
—
—
—
1800
220
29
35
63
93
49
47
10
21
0.95
310
—
—
—
—
—
—
—
—
—
—
1.60
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 12 A
V
GS
= 10 V
R
L
= 16.7
Rg = 10
V
DD
= 320 V
V
GS
= 10 V
I
D
= 24 A
I
F
= 24 A, V
GS
= 0
Note4
I
F
= 24 A, V
GS
= 0
di
F
/dt = 100 A/
μ
s
Notes: 4. Pulse test
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