- 您现在的位置：买卖IC网 > PDF目录380648 > RJK6018DPK-00 (Renesas Technology Corp.) Silicon N Channel MOS FET High Speed Power Switching PDF资料下载
参数资料
| 型号： | RJK6018DPK-00 |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道场效应晶体管高速电源开关 |
| 文件页数： | 2/4页 |
| 文件大小： | 80K |
| 代理商： | RJK6018DPK-00 |
RJK6018DPK
REJ03G1537-0100 Rev.1.00 Apr 04, 2007
Page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Min
600
—
—
3.0
—
Typ
—
—
—
—
0.200
Max
—
1
±0.1
4.5
0.235
Unit
V
μ
A
μ
A
V
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
—
—
—
—
—
—
—
—
—
—
—
—
4100
380
37
50
88
140
81
92
22
38
0.90
480
—
—
—
—
—
—
—
—
—
—
1.50
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 15 A
V
GS
= 10 V
R
L
= 20
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 30 A
I
F
= 30 A, V
GS
= 0
Note4
I
F
= 30 A, V
GS
= 0
di
F
/dt = 100 A/
μ
s
Notes: 4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| RJS-12A08T109A | RJ-45 MODULAR JACK FOR FAST ETHERNET |
| RJS-12AA08T089H | RJ-45 MODULAR JACK FOR FAST ETHERNET |
| RKD702KP | Silicon Schottky Barrier Diode for High Speed Switching |
| RKD750KP | Silicon Schottky Barrier Diode for Detector |
| RKD751KP | Silicon Schottky Barrier Diode for Detector |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RJK6018DPK-00#T0 | 制造商:Renesas Electronics Corporation 功能描述:PWR MOS TRS TO3P 制造商:Renesas Electronics Corporation 功能描述:PWR MOS TRS TO3P - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 600V 30A TO3P |
| RJK6018DPM | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| RJK6018DPM_12 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:600V - 30A - MOS FET High Speed Power Switching |
| RJK6018DPM-00#T1 | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 600V 30A TO3PFM |
| RJK6018DPM-00T1 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:600V - 30A - MOS FET High Speed Power Switching |
发布紧急采购，3分钟左右您将得到回复。