参数资料
型号: RKR0505AKH
厂商: Renesas Technology Corp.
英文描述: Silicon Schottky Barrier Diode for Rectifying
中文描述: 硅肖特基二极管整顿
文件页数: 4/6页
文件大小: 79K
代理商: RKR0505AKH
RKR0505AKH
Rev.1.00 Jan 09, 2007 page 4 of 5
0.2
0.1
0.3
0.4
2.0
1.0
3.0
0.2
0.1
0.3
0.4
0
-25
00
0
50
100
25
75
125
0.2
0.4
0.3
0.5
0.1
0.5
0.6
t
T
0V
Tj = 125°C
D = —
T
t
D=1/6
D=1/3
sin(
θ
=180°)
DC
D=1/2
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage V
R
(V)
0
R
D=1/6
sin(
θ
=180°)
D=1/2
D=1/3
DC
A
O
Ambient temperature Ta (
°C
)
Fig.6 Average rectified current vs. Ambient temperature
VR=VRRM/5
Tj =125°C
Rth(j-a)=200°C/W
Fig.4 Forward power dissipation vs. Forward current
Forward current I
F
(A)
F
t
T
0A
Tj = 25°C
D = —
T
t
0.5
5.0
4.0
0
20
40
10
30
50
D=1/2
D=2/3
Sin(
θ
=180°)
D=5/6
6.0
7.0
8.0
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