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参数资料
| 型号： | RKR0703BKH |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon Schottky Barrier Diode for Rectifying |
| 中文描述： | 硅肖特基二极管整顿 |
| 文件页数： | 2/6页 |
| 文件大小： | 80K |
| 代理商： | RKR0703BKH |
RKR0703BKH
Rev.1.00 Jan 09, 2007 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°
C)
Unit
V
V
A
A
°
C
°
C
Item
Symbol
Value
30
30
0.7
3
150
55 to +150
Repetitive peak reverse voltage
Reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. See from Fig.6 with Glass epoxy board.
2. Ta = 30
°
C, With Glass epoxy board (board size: 50mm
×
50 mm, Land size 6mm
×
6 mm)
Short form wave (
θ
180
°
C), V
R
= 15 V.
3. 10 ms sine wave 1 pulse.
V
RRM
V
R
I
O
*
1
*
2
I
FSM
*
3
Tj
Tstg
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
V
F1
V
F2
I
R1
I
R2
C
Rth(j-a)
Min
Typ
100
200
Max
0.37
0.55
10
50
20
Unit
V
Test Condition
I
F
= 100 mA
I
F
= 700 mA
V
R
= 5 V
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
Ceramics board *
1
Glass epoxy board *
2
Forward voltage
Reverse current
μ
A
Capacitance
Thermal resistance
pF
°
C/W
Notes: 1. Ceramics board
1.0
50h
×
50w
×
0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
2. Glass epoxy board
1.0
50h
×
50w
×
0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RKR0703BKH#P1 | 制造商:Renesas Electronics Corporation 功能描述:SCHOTTKY BARRIER DIODE 制造商:Renesas Electronics Corporation 功能描述:DIODE - Tape and Reel |
| RKR0703BKH_08 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for Rectifying |
| RKR104BKH | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for Rectifying |
| RKR104BKH#P1 | 制造商:Renesas Electronics Corporation 功能描述:SCHOTTKY BARRIER DIODE 制造商:Renesas Electronics Corporation 功能描述:DIODE - Tape and Reel |
| RKR104BKV | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for Rectifying |
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