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参数资料
| 型号： | RL850-B |
| 厂商： | RECTRON LTD |
| 元件分类： | 整流器 |
| 中文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | PLASTIC, DO-201AD, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 30K |
| 代理商： | RL850-B |
SOFT RECOVERY/FAST SWITCHING RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High surge capability
* High reliability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 1.20 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RL850
THRU
RL856
DO-201AD
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (At TA = 25
oC unless otherwise noted)
NOTES : 1. Test Conditions: IF = 1.0A, VR = 30V
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
2002-11
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 90
oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
VRRM
VDC
IO
IFSM
CJ
TJ, TSTG
VRMS
Volts
Amps
3.0
2.0
65
-55 to + 150
Amps
pF
0 C
UNITS
50
200
400
600
100
35
140
280
420
70
50
200
400
600
100
RL850
RL852
RL854
RL856
RL851
Maximum Reverse Recovery Current
IRR
100
Amps
at Rated DC Blocking Voltage TA = 25
oC
CHARACTERISTICS
Maximum Full Load Reverse Current Average , Full Cycle
.375” (9.5mm) lead length at TL = 100
oC
Maximum Reverse Recovery Time (Note 1)
VF
SYMBOL
IR
trr
1.3
1.0
200
uAmps
nSec
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 3.0A DC
Volts
UNITS
RL850
RL852
RL854
RL856
RL851
150
200
250
300
150
.220 (5.6)
.197 (5.0)
DIA.
.052 (1.3)
.048 (1.2)
DIA.
1.0 (25.4)
MIN.
.335 (8.5)
.375 (9.5)
1.0 (25.4)
MIN.
相关PDF资料 |
PDF描述 |
|---|---|
| RL856-B | |
| RL852-T | |
| RL851-B | |
| RL856-T | |
| RL852-B | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RL850-T | 功能描述:整流器 3A 50V 200ns RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| RL851 | 功能描述:二极管 - 通用，功率，开关 200nsSoft Rec Rect 3A,100V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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| RL8516 | 制造商:Hubbell Wiring Device-Kellems 功能描述:LAMPHLDR, 600W 250V, PULL-CH, 6 L, NM |
| RL851-B | 功能描述:二极管 - 通用，功率，开关 3A 100V 200ns RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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