RLD-78MD-K
Laser Diodes
!
Electrical and optical characteristics (Ta=25
°C)
Parameter
θ // and θ ⊥ are defined as the angle within which the intensity is 50% of the peak value.
Symbol
Min.
Typ.
Max.
Unit
Conditions
Threshold current
Ith
mA
35
60
Operating current
Iop
mA
45
70
PO
=7mW
Monitor current
Im
mA
0.05
0.15
0.4
Parallel divergence angle
θ //
deg
811
15
Perpendicular divergence angle
θ ⊥
deg
20
37
45
PO
=7mW
Parallel deviation angle
φ //
deg
±2
Peak emission wavelength
λ
nm
770
785
810
PO
=7mW
Signal-to-noise ratio
S/N
dB
60
f
=720kHz, f=10kHz
Perpendicular deviation angle
φ ⊥
deg
±3
Emission point accuracy
Y
Z
X
m
±80
Operating voltage
Vop
V
1.9
2.3
Differential efficiency
η
mW/mA
0.4
0.55
0.8
PO
=7mW
I(7mW)
I(5mW)
2mW
PO
=7mW, VR(PIN)=15V
!
Electrical and optical characteristics curves
10
8
6
4
2
0
10
20
30
40
50
60
70
80
OPTICAL
PO
WER
:
P
O
(mW)
OPERATING CURRENT : IF
(mA)
10°C
0
°C
10
°C
25
°C
40
°C
60
°C
Fig.1 Optical output
vs. operating current
30
40
50
60
70
80
90
100
20
10
20
0
102030405060
70
THRESHOLD
CURRENT
:
I
th
(mA)
PACKAGE TEMPERATURE : TC
(
°C)
Fig.2 Dependence of threshold
current on temperature
1.0
0.5
0
40
0
40
RELA
TIVE
OPTICAL
INTENSITY
ANGLE (
deg)
θ ⊥ direction
θ // direction
Fig.3 Far field pattern
10
6
4
8
2
0
0.05
0.1
0.15
0.2
OPTICAL
INTENSITY
:
P
O
(mW)
MONITOR CURRENT : Im
(mA)
Fig.4 Monitor current
vs. optical output
PO
=5mW
PO
=7mW
TC
=25°C
PO
=3mW
780
775
785
790
795
RELA
TIVE
OPTICAL
INTENSITY
WAVELENGTH :
λ (nm)
Fig.5 Dependence of emission
spectrum on optical output
800
780
790
760
770
10
20
0
10
20
3040
5060
70
W
A
VELENGTH
:
λ
(nm)
PACKAGE TEMPERATURE : TC (
°C)
Fig.6 Dependence of wavelength
on temperature