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参数资料
| 型号： | RLD2WMGZ4 |
| 元件分类： | 激光器 |
| 英文描述： | 782 nm, LASER DIODE |
| 文件页数： | 1/4页 |
| 文件大小： | 171K |
| 代理商： | RLD2WMGZ4 |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 Rev.B
660nm / 780nm Dual Wave High Power Lasers
RLD2WMGZ4
High break-down resistance is achieved by the die of optimized active layer design.
Suitable for optical recording and reading.
Applications
Dimensions (Unit : mm)
COMB (DVD reading / CD recording)
etc.
Features
1) DVD / CD optical power output
: CW10mW / Pulse 240mW
2) Single mode
3) High break down resistance by the own die structure.
4) Thin, high heat dissipation frame.
Absolute maximum ratings (Tc=25
°C)
660nm
Parameter
Output
Laser
Operating temperature
Storage temperature
PO
VR
VR(PIN)
Tstg
Top
Photodiode
CW 10
2
10 to +75
40 to +85
mW
V
Symbol
Limits
Unit
°C
Reverse
voltage
780nm
Parameter
Output
Laser
Operating temperature
Storage temperature
PO
VR
VR(PIN)
Tstg
Top
Photodiode
Pulse 240
2
10 to +75
40 to +85
mW
V
Symbol
Limits
Unit
°C
Reverse
voltage
Pulse condition : 100ns. Pulse on, 50% duty
Inner circuit diagram
(3) (1)
(2)
1.55
0.4
0.7
2-R0.5
0.22 ( Emitting point
Emitting point
:Y)
5.15
3.6
2.75
2.1
0.45
0.8
3.0
1.3
3-0.4
0.45 (
:Z)
0.85
3.4
1.5
1.45
1.0
5.0
780nmLD
660nmLD
(1)
(2)
(3)
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