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参数资料
| 型号： | RLD78MQW1 |
| 元件分类： | 激光器 |
| 英文描述： | 784 nm, LASER DIODE |
| 文件页数： | 2/2页 |
| 文件大小： | 83K |
| 代理商： | RLD78MQW1 |
RLD78MQW1
Laser Diodes
2/2
!
Electrical and optical characteristics（Tc=25
°C, CW）
Parameter
*
and
are defined as the angle within which the intensity is 50% of the peak value.
Symbol
Min.
Typ.
Max.
Unit
Conditions
Threshold current
Ith
mA
30
50
Operating current
Iop
mA
120
150
PO
=80mW
PO
=80mW
PO
=80mW
PO
=80mW
PO
=80mW
PO
=80mW
Parallel divergence angle
θ //
deg
8
910
Perpendicular divergence angle
θ ⊥
deg
15
17
19
Parallel deviation angle
φ //
deg
±2
Peak emission wavelength
λ
nm
779
784
789
PO
=80mW
Astigmatism
m
6
NA
=0.15, PO=80mW
Perpendicular deviation angle
φ ⊥
deg
±3
Emission point accurancy
Y
Z
X
m
±80
Operating voltage
Vop
V
2.0
2.5
Differential efficiency
η
mW/mA
0.7
0.9
1.4
40mW
I (80mW)
I (40mW)
θ ⊥
θ //
!
Electrical and optical characteristics curves
150
100
50
0
50
100
150
200
250
OPTICAL
PO
WER
:
P
O
(mW)
OPERATING CURRENT : IF
(mA)
Tc
=10°C
30
°C
50
°C
70
°C
Fig.1 Optical output
vs operating current
1.0
0.6
0.8
0.2
0.4
0
60
40
20
0
60
40
20
RELA
TIVE
OPTICAL
INTENSITY
ANGLE (
deg)
Fig.2 Far field pattern
θ⊥ direction
θ// direction
800
790
780
5
15253545556575
W
A
VELENGTH
:
λ
(nm)
PACKAGE TEMPERATURE : TC (
°C)
Fig.3 Dependence of wavelength
on temperature
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