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参数资料
| 型号： | RLD78MRA1 |
| 元件分类： | 激光器 |
| 英文描述： | 785 nm, LASER DIODE |
| 文件页数： | 1/3页 |
| 文件大小： | 69K |
| 代理商： | RLD78MRA1 |
RLD78MRA1
Laser Diodes
1/2
780nm Low Power Lasers
RLD78MRA1
A long-run product with market-proved high reliability. Matching to various needs.
Applications
Dimensions (Unit : mm)
CD-ROM
CD player
etc.
Features
1) Optical power output : CW 4.5mW
2) Low noise
3) High precision
φ5.6 metal stem
Absolute maximum ratings (Tc=25
°C)
Parameter
Output
Operating temperature
Storage temperature
PO
VR(PIN)
VR
Tstg
Topr
4.5
2
30
10 to +70
40 to +85
mW
V
Symbol
Limits
Unit
°C
Reverse voltage
Laser
Photodiode
Electrical and optical characteristics (Tc=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Threshold curret
Ith
mA
35
60
2mW/ (I (3mW)
I (1mW))
Operating current
Iop
mA
45
70
PO
=3mW
PO
=3mW
PO
=3mW
Parallel diveragence angle
Perpendicular divergence angle
θ //
deg
811
15
θ ⊥
deg
20
37
45
Parallel deviation angle
Perpendicular deviation angle
Emission point accuracy
θ //
deg
30
3
Peak emission wavelength
λ
X,Y,Z
nm
770
785
810
PO
=3mW
Signal-to-Noise ratio
S/N
dB
60
f
=720kHz, f=10kHz, PO=3mW
θ ⊥
deg
3.6
0
3.6
m
100
0
100
Operating voltage
Vop
V
1.9
2.3
Differential efficiency
η
mW/mA
0.1
0.25
0.6
PO
=3mW, VR(PIN)=15V
Monitor current
Im
mA
0.05
0.15
0.48
Equivalent circuit diagram
(3)
LD
PD
(1) (2)
4.9
φ5.6
2
0.4
5
0.4
0.22
0.62
1.5
0.82
5.0
1.6 1.5
0.7
3.2
Optical distance
1.35
±0.1
3-0.55max
3-0.4
(2)
(3)
1.6
(1)
1
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