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参数资料
| 型号： | RLD78MYA1 |
| 元件分类： | 激光器 |
| 英文描述： | 785 nm, LASER DIODE |
| 文件页数： | 2/4页 |
| 文件大小： | 84K |
| 代理商： | RLD78MYA1 |
RLD78MYA1
Laser diodes
2/3
!
Electrical and optical characteristics (Tc=25
°C)
Parameter
Ith
η
Im
λ
Min.
0.1
0.05
8
20
770
60
Typ.
35
45
1.9
0.25
0.15
11
37
785
±2
±3
Max.
60
70
2.3
0.6
0.3
15
45
±100
810
Unit
mA
Po
=3mW
Po
=3mW
Po
=3mW,VR(PIN)=15V
Po
=3mW
Po
=3mW
f
=720kHz, f=10kHz
mA
V
mW/mA
mA
deg
m
nm
dB
Conditions
Parallel deviation angle
Parallel divergence angle
Perpendicular deviation angle
Emission point accuracy
Peak emission wavelength
Perpendicular divergence angle
Monitor current
Differential efficiency
Operating voltage
Operating current
Threshold current
Signal-to-noise ratio
2mW
I(3mW)
I(1mW)
Symbol
Iop
Vop
θ//
θ⊥
φ//
φ⊥
S / N
Y
Z
X
θ// and θ⊥ are defined as the angle within which the intensity is 50% of the peak value.
!
Electrical and optical characteristic curves
OPTICAL
POWER
:
P
O
(mW)
OPERATING CURRENT : IF
(mA)
Fig.1 Optical output vs.operating current
10
0
1
2
3
4
5
20
30
40
50
60
70
80
75
°C
70
°C
60
°C
40
°C
25
°C
0
°C
10°C
THRESHOLD
CURRENT
:
I
th
(mA)
PACKAGE TEMPERATURE : TC
(
°C)
010
20
-10
30
40
50
60
70
80
10
100
90
80
70
60
50
40
30
20
Fig.2 Dependence of threshold
current on temperature
RELATIVE
OPTICAL
INTENSITY
ANGLE
(deg)
Fig.3 Far field pattern
-40
0
0.5
1.0
040
θ direction
WAVELENGTH
:
λ
(nm)
PACKAGE TEMPERATURE : Tc
(
°C)
-10
790
780
770
800
0
10 203040 50
80
60 70
Fig.4 Dependence of wavelength
on temperature
RELATIVE
OPTICAL
INTENSITY
WAVELENGTH :
λ (nm)
775
780
785
790
TC=25
°C
PO=2.5mW
PO=2mW
PO=1mW
Fig.5 Dependence of emission
spectrum on optical output
OPTICAL
INTENSITY
:
P
O
(mW)
MONITOR CURRENT : Im
(mA)
Fig.6 Monitor current vs.optical output
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
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