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参数资料
| 型号： | RM25HG-24S |
| 厂商： | Powerex Inc |
| 文件页数： | 2/2页 |
| 文件大小： | 230K |
| 描述： | DIODE SUPER FAST DISC 1200V 25A |
| 标准包装： | 7 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 1200V（1.2kV） |
| 电流 - 平均整流 (Io)： | 25A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 4V @ 100A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 300ns |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 1200V |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 包装： | 散装 |
D-2
Powerex,
Inc.,
200 Hillis Street,Youngwood,
Pennsylvania 15697-1800 (724) 925-7272
RM25HG-24S
Super Fast Recovery
Single Diode
25 Amperes/1200 Volts
Absolute Maximum Ratings
Characteristics Symbol Conditions RM25HG-24S Units
Peak Reverse Blocking Voltage VRRM
— 1200 Volts
DC Reverse Blocking Voltage VR(DC)
— 960 Volts
DC Current, TC
= 80°C (Resistive Load) IF(DC)
— 25 Amperes
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) IFSM
— 500 Amperes
I2t for Fusing, (8.3 milliseconds) I2t——A2sec
Storage Temperature TSTG
— -40 to 125 °C
Operating Temperature Tj
— -40 to 150 °C
Maximum Mounting Torque M3 Mounting Screw — — 10 kg.-cm.
Weight (Typical)
—
—
10 Grams
Electrical and Thermal Characteristics,
Tj
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions RM25HG-24S Units
Blocking State Maximums
Reverse Leakage Current, Peak IRRM
Tj
= 125°C, VRRM
= Rated 1 mA
—Tj
= 25°C, VRRM
= Rated 0.1 mA
Conducting State Maximums
Peak On-State Voltage VFM
Tj
= 25°C, IFM
= 100A 4.0 Volts
Switching Minimums
Reverse Recovery Time trr
Tj
= 25°C, IFM
= 100A 0.3
ms
Reverse Recovery Charge Qrr
di/dt = -500A/ms, VR = 600V
—
mC
Lead Strength — Tension Load: 2.5 kg. 30 s
— Bending Load: 1 kg. Bent to 90
o
2 Times
Thermal Maximums
Thermal Resistance, Junction-to-Case Ru(J-C)Diode
0.5°C/Watt
Contact Thermal Resistance, Case-to-Fin Ru(C-S)
Case to Fin, Thermal Grease Applied
0.5°C/Watt
FORWARD VOLTAGE DROP, VF,
(VOLTS)
FORWARD CURRENT, I
F
, (AMPERES)
FORWARD CHARACTERISTICS
(TYPICAL)
1.0 1.4 1.8 2.2 2.6 3.0
100
101
102
Tj
= 25
oC
FORWARD CURRENT, IF
(A)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
100
101
102
REVERSE RECOVERY TIME, I
rr
, (nS)
REVERSE RECOVERY TIME, I
rr
, (AMPERES)
101
102
103
100
101
102
Tj
= 25
oC
di/dt = 50A/μsec
trr
Irr
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RM25HG-24S_01 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE |
| RM25HG-24S_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
| RM25J000CT | 制造商:CACHIP 功能描述: |
| RM25J152CT | 制造商:Cal-Chip Electronics 功能描述: |
| RM25J220CT | 制造商:Cal-Chip Electronics 功能描述: |
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