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参数资料
| 型号： | RM30TPM-H |
| 厂商： | Powerex Inc |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | DIODE 3-PHASE BRIDGE 800V 60A |
| 标准包装： | 4 |
| 电压 - 峰值反向(最大)： | 800V |
| 电流 - DC 正向(If)： | 60A |
| 二极管类型： | 三相 |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 包装： | 散装 |
| 供应商设备封装： | 模块 |
MITSUBISHI DIODE MODULES
RM30TPM-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V RRM
V RSM
E a
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
Voltage class
H
800
960
220
Unit
V
V
V
Symbol
I O
I FSM
I 2t
f
T j
T stg
V iso
—
—
Parameter
DC output current
Surge (non-repetitive) forward current
I 2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Three-phase full wave rectifying circuit, T C =105 ° C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M4
Mounting screw M4
Typical value
Ratings
60
600
1.5 × 10 3
1000
–40~+150
–40~+125
2500
0.98~1.47
10~15
0.98~1.47
10~15
100
Unit
A
A
A 2 s
Hz
° C
° C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I RRM
V FM
R th (j-c)
R th (c-f)
—
Parameter
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T j =150 ° C, V RRM applied
T j =25 ° C, I FM =60A, instantaneous meas.
Junction to case
Case to fin, conductive grease applied
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
—
10
Typ.
—
—
—
—
—
Max.
10
1.2
0.31
0.09
—
Unit
mA
V
° C/ W
° C/ W
M ?
Mar.2002
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相关代理商/技术参数 |
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|---|---|
| RM30TPM-H_02 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
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