参数资料
型号: RM50HG-12S
厂商: Powerex Inc
文件页数: 2/2页
文件大小: 68K
描述: DIODE SUPER FAST SGL 600V 50A
标准包装: 7
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 50A
电压 - 在 If 时为正向 (Vf)(最大): 4V @ 200A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 200ns
电流 - 在 Vr 时反向漏电: 100µA @ 600V
安装类型: 通孔
封装/外壳: TO-264-3,TO-264AA
包装: 散装
D-4
Powerex,
Inc.,
200 Hillis Street,Youngwood,
Pennsylvania 15697-1800 (724) 925-7272
RM50HG-12S
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
Absolute Maximum Ratings
Characteristics Symbol Conditions RM50HG-12S Units
Peak Forward Blocking Voltage VDRM
— 600 Volts
Peak Reverse Blocking Voltage (Non-Repetitive) VRRM —
720 Volts
DC Reverse Blocking Voltage VR(DC)
— 480 Volts
DC Current, TC
= 80°C (Resistive Load) IF(DC)
— 50 Amperes
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) IFSM
— 1000 Amperes
I2t for Fusing, (8.3 milliseconds) I2t——A2sec
Storage Temperature TSTG
— -40 to 125 °C
Operating Temperature Tj
— -40 to 150 °C
Maximum Mounting Torque M3 Mounting Screw — — 10 kg.-cm.
Weight (Typical)
10 Grams
Electrical and
Thermal Characteristics,Tj
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions RM50HG-12S Units
Blocking State Maximums
Reverse Leakage Current, Peak IRRM
VRRM applied, Tj
= 150°C 1.0 mA
VRRM applied, Tj
= 25°C 0.1 mA
Conducting State Maximums
Forward Voltage Drop VFM
Tj
= 25°C, IFM
= 200A 4.0 Volts
Switching Minimums
Reverse Recovery Time trr
Tj
= 25°C, IFM
= 100A 0.2
ms
Reverse Recovery Charge Qrr
di/dt = -1000A/ms, VR = 300V
mC
Lead Integrity
— Tension Load: 25 kg 30.0 s
— Bending Load: 1 kg bent to 90° 2.0 times
Thermal Maximums
Thermal Resistance, Junction-to-Case Ru(J-C)Diode
0.5°C/Watt
Contact Thermal Resistance, Case-to-Fin Ru(C-S)
Case to Fin, Thermal Grease Applied
0.5°C/Watt
*Maximum ratings unless otherwise specified
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