参数资料
型号: RN1002
厂商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
中文描述: 开关,逆变电路,接口电路及驱动电路应用
文件页数: 1/6页
文件大小: 253K
代理商: RN1002
RN1001 RN1006
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1001,RN1002,RN1003
RN1004,RN1005,RN1006
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2001
~
RN2006
Equivalent Circuit and Bias Resister Values
Type No.
R1 (k
)
R2 (k
)
RN1001
4.7
4.7
RN1002
10
10
RN1003
22
22
RN1004
47
47
RN1005
2.2
47
RN1006
4.7
47
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1001~1006
V
CEO
50
V
RN1001~1004
10
Emitter-base voltage
RN1005, 1006
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
400
mW
Junction temperature
T
j
150
°C
Storage temperature range
RN1001~1006
T
stg
55~150
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
TO-92
SC-43
2-5F1B
Unit: mm
相关PDF资料
PDF描述
RN1003 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1004 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1005 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1107 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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