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参数资料
| 型号： | RN1108 |
| 厂商： | Toshiba Corporation |
| 英文描述： | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| 中文描述： | 开关，逆变电路，接口电路及驱动电路应用 |
| 文件页数： | 2/6页 |
| 文件大小： | 175K |
| 代理商： | RN1108 |
RN1107~1109
2001-06-07
2
Electrical Characteristics
(Ta = 25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
nA
Collector cut-off current
RN1107~1109
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
RN1107
―
V
EB
= 6V, I
C
= 0
0.081
―
0.15
RN1108
―
V
EB
= 7V, I
C
= 0
0.078
―
0.145
Emitter cut-off current
RN1109
I
EBO
―
V
EB
= 15V, I
C
= 0
0.167
―
0.311
mA
RN1107
―
80
―
―
RN1108
―
80
―
―
DC current gain
RN1109
h
FE
―
V
CE
= 5V, I
C
= 10mA
70
―
―
―
Collector-emitter
saturation voltage
RN1107~1109
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
RN1107
―
0.7
―
1.8
RN1108
―
1.0
―
2.6
Input voltage (ON)
RN1109
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
2.2
―
5.8
V
RN1107
―
0.5
―
1.0
RN1108
―
0.6
―
1.16
Input voltage (OFF)
RN1109
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
1.5
―
2.6
V
Translation frequency
RN1107~1109
f
T
―
V
CE
=10V, I
C
= 5mA
―
250
―
MHz
Collector output
capacitance
RN1107~1109
C
ob
―
V
CB
= 10V, I
E
= 0,
f = 1MHz
―
3
6
pF
RN1107
―
7
10
13
RN1108
―
15.4
22
28.6
Input Resistor
RN1109
R1
―
―
32.9
47
61.1
k
RN1107
―
0.191
0.213
0.232
RN1108
―
0.421
0.468
0.515
Resistor Ratio
RN1109
R1/R2
―
―
1.92
2.14
2.35
―
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RN1108(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor, digital, NPN, RN1108(F) |
| RN1108ACT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN1108CT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
| RN1108F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| RN1108FS | 功能描述:开关晶体管 - 偏压电阻器 50mA 20volts 22K x 47Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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