参数资料
型号: RN1903
厂商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 东芝npn型晶体管硅外延型(厘进程)
文件页数: 2/7页
文件大小: 271K
代理商: RN1903
RN1901~RN1906
2001-06-07
2
Electrical Characteristics
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= 50V, I
E
= 0
100
Collector cut-off current
RN1901~1906
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
RN1901
0.82
1.52
RN1902
0.38
0.71
RN1903
0.17
0.33
RN1904
V
EB
= 10V, I
C
= 0
0.082
0.15
RN1905
0.078
0.145
Emitter cut-off current
RN1906
I
EBO
V
EB
= 5V, I
C
= 0
0.074
0.138
mA
RN1901
30
RN1902
50
RN1903
70
RN1904
80
RN1905
80
DC current gain
RN1906
h
FE
V
CE
= 5V, I
C
= 10mA
80
Collector-emitter
saturation voltage
RN1901~1906
V
CE (sat)
I
C
= 5mA,
I
B
= 0.25mA
0.1
0.3
V
RN1901
1.1
2.0
RN1902
1.2
2.4
RN1903
1.3
3.0
RN1904
1.5
5.0
RN1905
0.6
1.1
Input voltage (ON)
RN1906
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
0.7
1.3
V
RN1901~1904
1.0
1.5
Input voltage (OFF)
RN1905, 1906
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
0.5
0.8
V
Translation frequency
RN1901~1906
f
T
V
CE
= 10V, I
C
= 5mA
250
MHz
Collector output
capacitance
RN1901~1906
C
ob
V
CB
= 10V, I
E
= 0,
f = 1MHz
3
6
pF
RN1901
3.29
4.7
6.11
RN1902
7
10
13
RN1903
15.4
22
28.6
RN1904
32.9
47
61.1
RN1905
1.54
2.2
2.86
Input resistor
RN1906
R1
3.29
4.7
6.11
k
RN1901~1904
0.9
1.0
1.1
RN1905
0.0421 0.0468 0.0515
Resistor ratio
RN1906
R1/R2
0.09
0.1
0.11
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