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参数资料
| 型号： | RNI12W |
| 厂商： | SUNLED COMPANY LTD |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 150K |
| 代理商： | RNI12W |
www.SunLED.com
Part Number: RNI12W
PHOTOTRANSISTOR
Apr 08,2011
SDSA4752 V4 Layout: Maggie L.
P. 1/2
Features
● Radial / Through hole package
● Reliable & robust
● Low power consumption
● Available on tape and reel
● RoHS Compliant
Package Schematics
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Specifications are subject to change without notice.
Electrical / Optical Characteristics at TA=25°C
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Condiction
VBR CEO
Collector-to-Emitter Breakdown Voltage
30
V
IC=100μA
Ee=0mW/cm2
VBR ECO
Emitter-to-Collector Breakdown Voltage
5
V
IE=100μA
Ee=0mW/cm2
VCE(SAT)
Collector-to-Emitter Saturation Voltage
0.8
V
IC=2mA
Ee=20mW/cm2
ICEO
Collector Dark Current
100
nA
VCE=10V
Ee=0mW/cm2
TR
Rise Time (10% to 90%)
15
μs
TF
Fall Time (90% to 10%)
15
μs
I(ON)
On State Collector Current
0.7
3
mA
VCE=5V
Ee=1mW/cm2
λ=940nm
VCE=5V
IC=1mA
RL=1KΩ
Absolute Maximum Ratings at TA=25°C
Parameter
Maximum Ratings
Collector-to-Emitter Voltage
30V
Emitter-to-Collector Voltage
5V
Power Dissipation at (or below) 25°C Free Air Temperature
100mW
Operating / Storage Temperature Range
-40°C To +85°C
Lead Solder Temperature (>5mm for 5sec)
260°C
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