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参数资料
| 型号： | RNI82B |
| 厂商： | SUNLED COMPANY LTD |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件页数： | 2/3页 |
| 文件大小： | 151K |
| 代理商： | RNI82B |
Published Date : MAR 22,2008
Drawing No : SDSA0322
V5
Checked : B.L.LIU
P.2/3
NPN BLACK PLASTIC PHOTOTRANSISTOR
Part Number:
RNI82B
www.SunLED.com
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Condiction
VBR CEO
Collector-to-Emitter Breakdown Voltage
30
-
V
IC=100
μ A
Ee=0mW/cm2
VBR ECO
Emitter-to-Collector Breakdown Voltage
5
-
V
IE=100
μ A
Ee=0mW/cm2
VCE(SAT)
Collector-to-Emitter Saturation Voltage
-
0.4
V
IC=500
μ A
Ee=5mW/cm2
ICEO
Collector Dark Current
-
100
nA
VCE=10V
Ee=0mW/cm2
TR
Rise Time (10% to 90%)
-
16
-
μ s
TF
Fall Time (90% to 10%)
-
18
-
μ s
I(ON)
On State Collector Current
0.1
0.5
-
mA
VCE=5V
Ee=1mW/cm2
λ=940nm
VCE=5V
IC=1mA
RL=1K
Ω
R
Collector Current Ratio
of Phototransistor
0.8
1
1.25
Ω
Ic (on) (a)/
Ic(on) (b)
Electrical / Optical Characteristics at TA=25°C
RNI82B
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