参数资料
型号: RP130Q181D5-TR-F
厂商: RICOH COMPANY LTD
元件分类: 固定正电压单路输出LDO稳压器
英文描述: 1.85 V FIXED POSITIVE LDO REGULATOR, 0.68 V DROPOUT, PDSO4
封装: LEAD FREE, SC-82AB, 4 PIN
文件页数: 28/31页
文件大小: 408K
代理商: RP130Q181D5-TR-F
RP130x
6
ELECTRICAL CHARACTERISTICS
VIN
=Set VOUT+1V for VOUT>1.5V. VIN=2.5V for VOUT <
= 1.5V. IOUT=1mA, CIN=COUT=0.47F, unless otherwise noted.
The specification in
is checked and guaranteed by design engineering at 40
°C <
= Topt <
= 85°C,
unless otherwise noted.
RP130xxx1A
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
VOUT>2.0V
×0.99
×1.01
V
Topt
=25°C
VOUT <
= 2.0V
20
mV
VOUT>2.0V
×0.985
×1.015
V
VOUT
Output Voltage
40°C <
= Topt <
= 85°C
VOUT <
= 2.0V
30
mV
IOUT
Output Current
150
mA
VOUT/
IOUT
Load Regulation
1mA <
= IOUT <
= 150mA
10
30
mV
1.2V <
= VOUT<1.5V
0.67
1.00
1.5V <
= VOUT<1.7V
0.54
0.81
1.7V <
= VOUT<2.0V
0.46
0.68
2.0V <
= VOUT<2.5V
0.41
0.60
2.5V <
= VOUT<4.0V
0.32
0.51
VDIF
Dropout Voltage
IOUT
=150mA
4.0V <
= VOUT
0.24
0.37
V
ISS
Supply Current
IOUT
=0mA
38
58
A
Istandby
Standby Current
VCE
=VIN
0.1
1.0
A
VOUT/
VIN
Line Regulation
Set VOUT
+0.5V <
= VIN <
= 5.0V
0.02
0.10
%/V
RR
Ripple Rejection
f
=1kHz, Ripple 0.2Vp-p
VIN
=Set VOUT+1.0V, IOUT=30mA
(In case that VOUT <
= 2.0V, VIN=3.0V)
80
dB
VIN
Input Voltage
1.7
6.5
V
VOUT/
Topt
Output Voltage
Temperature Coefficient
40°C <
= Topt <
= 85°C
±20
ppm
/
°C
Ilim
Short Current Limit
VOUT
=0V
40
mA
VCEH
CE Input Voltage "H"
1.0
V
VCEL
CE Input Voltage "L"
0.4
V
en
Output Noise
BW
=10Hz to 100kHz, IOUT=30mA
30
Vrms
The specification in
is checked and guaranteed by design engineering at
40°C <
= Topt <
= 85°C, unless
otherwise noted.
All of unit are tested and specified under load conditions such that Topt
=25°C except for Detector Threshold
Temperature Coefficient.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
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