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参数资料
| 型号： | RPI-0126 |
| 元件分类： | 开关 |
| 英文描述： | 1.2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封装： | ULTRA MINIATURE, SMD, 4 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 68K |
| 代理商： | RPI-0126 |
RPI-0126
Photointerrupter, Ultraminiature SMD type
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Features
1) Ultraminiature SMD type.
2) Gap 1.2mm.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
Dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Fig.11 Output characteristics
Optical axis center
Cathode
Emitter
Collector
Fig.1 Relative output current vs.
distance ( )
Fig.4 Relative output current vs.
distance ( )
Fig.2 Forward current falloff
Fig.10
Dark current vs.
ambient temperature
Fig.8 Response time vs.
collector current ( I )
Fig.9 Response time vs.
collector current ( II )
Fig.6 Relative output vs. ambient
temperature
Fig.7 Collector current vs.
forward current
Fig.3 Forward current vs. forward
voltage
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
sample No 1
1,2,3,4,5,6,7,8,9
10
sample No 2
sample No 3
20
0
20
40
60
80
100
10
50
40
30
20
0
AMBIENT TEMPERATURE : Ta (C)
FORWARD
CURRENT
:
I
F
(
mA
)
AMBIENT TEMPERATURE : Ta (C)
DARK
CURRENT
:
I
CEO
(n
A
)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(m
A
)
FORWARD VOLTAGE : VF (V)
FORWARD
CURRENT
:
I
F
(
mA
)
FORWARD CURRENT : IF (mA)
COLLECTOR CURRENT : IC (
mA)
COLLECTOR
CURRENT
:
I
C
(
mA
)
RESPONSE
TIME
:
tr
(
s)
COLLECTOR CURRENT : IC (
mA)
RESPONSE
TIME
:
tr
(
s)
DISTANCE : d (mm)
RELATIVE
COLLECTOR
CURRENT
:
I
C
(
%
)
DISTANCE : d (mm)
RELATIVE
COLLECTOR
CURRENT
:
I
C
(
%
)
RELATIVE
COLLECTOR
CURRENT
:
I
C
(
%
)
110
0.1
1
10
100
110
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
100
120
40
60
80
20
0
sample No 1
sample No 2
sample No 3
010
515
20
1.8
1.6
1.4
1.2
1.0
0.2
0.6
0.8
0.4
0.0
1.5
0
0.3
0.6
0.9
1.2
100
120
40
60
80
20
0
90
580
70
60
50
40
30
20
10
0
1
2
3
4
00
0
140
120
100
80
60
40
20
0
5
10
15
20
0.0
1.8
No.4
No.3
No.1
No.2
No.10
No.5
No.6
No.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
20
40
20
60
0
40
80
100
0
5
4
3
2
1
0
0.2
0.4
0.6
0.8
1
0.40
0.35
0.30
0.25
0.20
0.05
0.15
0.10
0.00
d
No.7
No.9
line 3
line 2
line 1
line 3
line 2
line 1
d
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPTION
:
P
D
/P
C
(mW)
AMBIENT TEMPERATURE : Ta (C)
20
0
40
60
80
20
100
0
20
40
60
80
100
120
PD
PC
Parameter
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
Rise time
Fall time
Symbol
VF
IR
ICEO
λP
IC
Ileak
VCE(sat)
tr
tf
Min.
0.9
Typ.
1.5
800
10
Max.
1.8
10
0.1
3.6
0.4
5
Unit
VIF
=50mA
IF
=50mA
VR
=5V
VCE
=10V
IF
=20mA, IC=0.1mA
IF
=5mA, VCE=5V
IF
=5mA, VCE=5V
IF
=20mA, VCE=5V
VCC
=5V, IF=20mA, RL=100
A
nm
mA
IC
0.15
0.75
mA
V
s
10
s
850
nm
Conditions
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Photo
transistor
Infrared
light
emitter
diode
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
DC leakage current
Collector-emitter saturation voltage
Response time
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
30 to +85
40 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input
(LED)
Output
photo-
transistor
(
)
A
LED side
PT side
776
(0.4)
1.8
(0.7)
(0.35)
2.8
(0.35)
Stamp (year, week, day of the week)
1.2
C0.2
0.35
0.5
0.25
0.8
1.65
0.8
2.0
Side electrode
Au plating
0.32
±0.15
0.32
±0.15
A'
1.8
1.05
Cross-section A-A'
0.3
Anode
IF=10mA
IF=8mA
IF=5mA
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