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| 型号： | RPI-124 |
| 元件分类： | 开关 |
| 英文描述： | 1 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封装： | ULTRA SMALL PACKAGE-4 |
| 文件页数： | 1/2页 |
| 文件大小： | 68K |
| 代理商： | RPI-124 |
RPI-124
Photointerrupter, Ultraminiature type
Applications
Optical control equipment
Cameras
Floppy disk drives
Features
1) Ultra-small.
2) High-precision position detection
(slit width = 0.15mm).
3) Minimal influence from stray light.
4) Low collector-emitter saturation voltage.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Anode
Cathode
Collector
Emitter
Cross-section A-A
Gap
Optical axis center
Through hole
A
2-R0.3
Max.0.3
C0.7
4 (bottom)
2.6
3.9
1
2.3
3.3
4-0.2
(3)
(1.5)
4-0.5
0.15
±0.1
4-0.4
(2)
2
4-
φ0.8
3
2.5
±
0.5
Fig.1 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0
25
50
75
100
125
1
2
3
4
5
d
Fig.4 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
DISTANCE : d (mm)
0
25
50
75
100
125
1
2
3
4
5
d
Fig.2 Forward current falloff
FORWARD
CURRENT
:
I
F
(mA)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
40
60
80
20
100
0
20
10
30
40
50
Fig.10 Output characteristics
td
tr
tf
10%
90%
RL
VCC
td
:
t r
:
t f
:
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
Input
Output
COLLECTOR
CURRENT
:
Ic
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0
0.5
1
1.5
2
2.5
2
04
6
10
8
40mA
30mA
20mA
10mA
IF=50mA
Fig.11 Response time measurement circuit
Fig.8 Response time vs.
collector current
RESPONSE
TIME
:
t
(
s)
COLLECTOR CURRENT : Ic (mA)
10
1
0.1
0.05
10
100
1
RL=1k
RL=500
RL=100
Fig.9 Dark current vs.
ambient temperature
DARK
CURRENT
:
I
D
(nA)
AMBIENT TEMPERATURE : Ta (
°C)
100
1000
100
10
1
0.1
75
50
25
0
25
VCE
=30V
VCE
=20V
VCE
=10V
Fig.6 Relative output vs. ambient
temperature
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
40 20
0
20406080
100
0
20
40
60
80
100
120
160
140
Fig.7 Collector current vs.
forward current
COLLECTOR
CURRENT
:
Ic
(mA)
FORWARD CURRENT : IF (mA)
010
20
30
40
50
0
1
2
3
4
5
VCE
=5V
0.4
0.2
0.6
1.0
0.8
1.2
1.4
1.8
1.6
0
20
40
10
30
50
FORWARD VOLTAGE : VF (
V)
FORWARD
CURRENT
:
I
F
(
mA
)
Fig.3 Forward current vs. forward
voltage
0.4
0.2
0.6
1.0
0.8
1.2
1.4
1.8
1.6
0
20
40
10
30
50
75
°C
50
°C
25
°C
0
°C
25°C
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPATION
:
P
D
/Pc
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
25
0
20
40
60
80
100
0
25
50
75 85
100
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
PD
PC
Parameter
Symbol
VF
IR
ICEO
λP
IC
VCE(sat)
tr tf
Min.
0.3
Typ.
1.3
800
10
Max.
1.6
10
0.5
1.5
0.3
Unit
VIF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.15mA
VCC
=5V, IF=20mA, RL=100
A
nm
mA
V
s
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λP
fC
IF
=50mA
1
MHz
950
nm
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Photo
transistor
Infrared light emitter diode
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +100
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input(LED)
Output
photo-
transistor
(
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RPI-124_05 | 制造商:ROHM 制造商全称:Rohm 功能描述:Photointerrupter, Ultraminiature type |
| RPI-124A | 制造商:ROHM Semiconductor 功能描述:RPI-124 Series 800 nm 50 mA Photointerrupter Ultraminiature Type 制造商:ROHM 功能描述:RPI-124 Series 800 nm 50 mA Photointerrupter Ultraminiature Type |
| RPI-124B | 制造商:ROHM Semiconductor 功能描述: |
| RPI-124F | 功能描述:SENSOR OPTO SLOT 1MM TRANS THRU RoHS:是 类别:传感器，转换器 >> 光学 - 光断续器 - 槽型 - 晶体管输出 系列:- 产品变化通告:Internal Chip Change 04/May/2007 标准包装:100 系列:- 检测距离:0.063"（1.6mm） 检测方法:可传导的 输出配置:光电晶体管 电流 - DC 正向(If):50mA 电流 - 集电极 (Ic)（最大）:20mA 电压 - 集电极发射极击穿（最大）:35V 响应时间:35µs，35µs 安装类型:通孔 封装/外壳:PCB 安装 包装:管件 类型:无放大 工作温度:-25°C ~ 85°C 其它名称:425-1978-5 |
| RPI-125 | 功能描述:光学开关（透射型，光电晶体管输出） PHOTOINTERRUPTER ULTRA MIN; HIGH RES RoHS:否 制造商:Omron Electronics 输出设备:Phototransistor 槽宽:3.4 mm 光圈宽度:0.5 mm 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电流: 安装风格:Through Hole 最大工作温度:+ 85 C 最小工作温度:- 25 C 封装: |
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