参数资料
型号: RPT-37PB3F
元件分类: 光敏三极管
英文描述: PHOTO TRANSISTOR DETECTOR
封装: PLASTIC PACKAGE-2
文件页数: 1/3页
文件大小: 130K
代理商: RPT-37PB3F
1/2
www.rohm.com
c
2010 ROHM Co., Ltd. All rights reserved.
2010.07 - Rev.A
Phototransistor, top view type
RPT-37PB3F
The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect
from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
It is possible to distinguish the polarity by the shape of ramp type.
Applications
Dimensions (Units : mm)
Optical control equipment
Receiver for sensors
Features
1) High sensitivity.
2) Almost no effect from stray light.
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
IC
VCEO
PC
VECO
Topr
Tstg
Limits
25~+85
30~+85
32
5
30
150
Unit
V
mA
mW
°C
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Electrical and optical characteristics (Ta = 25
C)
Parameter
Symbol
IC
ICEO
λP
VCE(sat)
θ1 / 2
trtf
Min.
2.0
Typ.
800
±36
10
Max.
0.5
0.4
Unit
mA
VCE
=5V, E=500LX
VCE
=10V(Black box)
IC
=1mA, E=500LX
VCC
=5V, IC=1mA, RL=100Ω
μA
nm
V
deg
μs
Conditions
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
φ3.1±0.2
φ3.8±0.3
1.3
Max.1
5.2
±
0.3
Min.24
2
0.5
(2.5)
4
0.6
2.5
±
1
2
Internal connection diagram
Notes :
1. Unspecfied tolerance shall be
±0.2.
2. Measurement in the bracket are that of
lead pin at base the mold.
3. Dimension in parenthesis are show for
reference.
Emitter
Collector
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