参数资料
型号: RS1PDHE3/84A
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 483K
描述: DIODE FAST 1A 200V 150NS SMP
标准包装: 3,000
系列: eSMP™
二极管类型: 标准
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.3V @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 150ns
电流 - 在 Vr 时反向漏电: 1µA @ 200V
安装类型: 表面贴装
封装/外壳: DO-220AA
供应商设备封装: DO-220AA(SMP)
包装: 带卷 (TR)
‘? I RS1 PB, RS1 PD, RS1 PG, RS1PJ7 www'V'Shay'C°m Vishay General SemiconductorHigh Current Density Surface Mount Glass PassivatedFast Switching Rectifier
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eSMP? Series {:5/:r.yII-T(’J:lvEi):3file - typical height of 1.0 mm AU::’::‘E’f:F’lE'é’/EE
0 Ideal for automated placement ?
0 Glass passivated chip junction
c Fast switching for high efficiency ROHS
0 Low thermal resistance Ei‘:‘n|n_I:,L|G’‘E’‘,I
- High forward surge capability FREE
D°_22oAA (SMP) . ;A6£e()et)::MSL level 1, per J—STD-020, LF maximum peak of
PRIMARY cHARAcTERI Ics ' AEGQ101 quamied‘i . Material categorization: For definitions or complianceM .T please see www.V.ehej.egm/gge?9gei 2mmm MEcHA"'°AL “TAZn caSe=DO‘22OAA(SMP)pg Molding compound meets UL 94 v.0 riammabiiity rating i Base P/N.M3 _ naiogen_rree, RoHs.eompiiant, andBase P/NHM3 _ naiogen_tree, RoHs_compiiant, and
commercial grade
automotive grade
Terminals: Matte tin plated leads, solderable per
TYPICAL APPLICATIONS J-sTD?oo2 and JESD 228102Revision: 21-Aug-13 1 Document Number: 88934
For use in fast Switching rectification of power Suppiy, M3 sutfix meets JESD 201 class 2 whisker test, HM3 suffix
inverters, converters, and freewheeling diodes for meets JESD 201 Class 2 Whlskel I651
consumer, automotive and telecommunication. poiarityi coior band denotes the Cathode end
MAXIMUM RATmGs (TA = 25 Dc unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average fonlvard rectified current (fig. 1)
Peak fom/ard surge current 10 ms single half sine-wave superimposed
on rated load
Operating junction and storage temperature range
ELEcTRIcAL cHARAcTERIsTIcs NA = 25 °C umess
PARAMETER TEsTcoNDITIoNs
Maximum instantaneous forward voltage
Maximum reverse current at rated
VR voltage TA : 125 no
It: :O.5A,lR:1.0A,
I": 0.25 A
Typical junction capacitance 4.0 V, 1 MHZ
N ates
(I) Pulse test: 300 Us pulse width, 1 % duty cycle
(2) Pulse test: Pulse width g 40 ms
Maximum reverse recovery time
For technical questions within your region: Diode§Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.gomzdoc?9100!!
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参数描述
RS1PDHM3/84A 功能描述:二极管 - 通用,功率,开关 200volt 1.0amp RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
RS1PDHM3/85A 功能描述:二极管 - 通用,功率,开关 200volt 1.0amp RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
RS1PD-M3/84A 功能描述:二极管 - 通用,功率,开关 200volt 1.0amp RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
RS1PD-M3/85A 功能描述:二极管 - 通用,功率,开关 200volt 1.0amp RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
RS1PG 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Glass Passivated Fast Switching Rectifier