参数资料
型号: RT1206DRE0716R5L
厂商: Yageo
文件页数: 7/10页
文件大小: 0K
描述: RES 16.5 OHM 1/4W .5% SMD 1206
标准包装: 5,000
系列: RT
电阻(欧姆): 16.5
功率(瓦特): 0.25W,1/4W
复合体: 薄膜
温度系数: ±50ppm/°C
容差: ±0.5%
封装/外壳: 1206(3216 公制)
尺寸/尺寸: 0.122" L x 0.063" W(3.10mm x 1.60mm)
高度: 0.026"(0.65mm)
端子数: 2
包装: 带卷 (TR)
Product specification
7
Chip Resistor Surface Mount
RT
SERIES
0402 to 2512 (RoHS Compliant)
10
TESTS AND REQUIREMENTS
Table 4 Test condition, procedure and requirements
TEST
Temperature
TEST METHOD
IEC 60115-1 4.8
PROCEDURE
At +25/–55 °C and +25/+125 °C
REQUIREMENTS
Refer to table 2
Coefficient of
R 2 –R 1
Resistance
(T.C.R.)
Formula:
T.C.R= ------------------------- ×10 6 (ppm/°C)
R 1 (t 2 –t 1 )
Where
t 1 =+25 °C or specified room temperature
t 2 =–55 °C or +125 °C test temperature
R 1 =resistance at reference temperature in ohms
R 2 =resistance at test temperature in ohms
Life/Endurance
IEC 60115-1 4.25.1
At 70±5 °C for 1,000 hours, RCWV applied for
±(0.5%+0.05 ? )
1.5 hours on, 0.5 hour off, still air required
High
IEC 60068-2-2
1,000 hours at 155±5 °C, unpowered
±(0.5%+0.05 ? )
Temperature
Exposure/
Endurance at
Upper Category
Temperature
Moisture
Resistance
MIL-STD-202G Method-106G
Each temperature / humidity cycle is defined at 8
hours, 3 cycles / 24 hours for 10d. with 25 °C /
±(0.5%+0.05 ? )
65 °C 95% R.H, without steps 7a & 7b,
unpowered
Parts mounted on test-boards, without
condensation on parts
Measurement at 24±2 hours after
test conclusion
Thermal Shock
MIL-STD-202G Method-107G
-55/+125 °C
Number of cycles required is 300. Devices
unmounted
±(0.5%+0.05 ? ) for 10 K ? to
10 M ?
±(0.5%+0.05 ? ) for others
Maximum transfer time is 20 seconds. Dwell time
is 15 minutes. Air – Air
Humidity
(steady state)
IEC 60115-1 4.37
Steady state for 1000 hours at 40 °C / 95% R.H.
RCWV applied for 1.5 hours on and
±(0.5%+0.05 ? )
0.5 hour off
www.yageo.com
Oct 21, 2009 V.4
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RT1206DRE0716R9L 功能描述:RES 16.9 OHM 1/4W .5% SMD 1206 RoHS:是 类别:电阻器 >> 芯片电阻 - 表面安装 系列:RT 产品培训模块:Intro to Thin Film Chip Resistors 产品目录绘图:RR Series Top, Side RR Series Thin Film Current Flow Thick Film Current Flow 标准包装:200 系列:RR 电阻(欧姆):5.62k 功率(瓦特):0.063W,1/16W 复合体:薄膜 特点:- 温度系数:±25ppm/°C 容差:±0.5% 封装/外壳:0603(1608 公制) 尺寸/尺寸:0.063" L x 0.031" W(1.60mm x 0.80mm) 高度:0.020"(0.50mm) 端子数:2 包装:Digi-Reel® 产品目录页面:2213 (CN2011-ZH PDF) 其它名称:RR08P5.62KDDKR
RT1206DRE0716RL 功能描述:RES 16.0 OHM 1/4W .5% SMD 1206 RoHS:是 类别:电阻器 >> 芯片电阻 - 表面安装 系列:RT 产品培训模块:Intro to Thin Film Chip Resistors 产品目录绘图:RR Series Top, Side RR Series Thin Film Current Flow Thick Film Current Flow 标准包装:200 系列:RR 电阻(欧姆):5.62k 功率(瓦特):0.063W,1/16W 复合体:薄膜 特点:- 温度系数:±25ppm/°C 容差:±0.5% 封装/外壳:0603(1608 公制) 尺寸/尺寸:0.063" L x 0.031" W(1.60mm x 0.80mm) 高度:0.020"(0.50mm) 端子数:2 包装:Digi-Reel® 产品目录页面:2213 (CN2011-ZH PDF) 其它名称:RR08P5.62KDDKR
RT1206DRE07174KL 功能描述:RES 174K OHM 1/4W .5% SMD 1206 RoHS:是 类别:电阻器 >> 芯片电阻 - 表面安装 系列:RT 产品培训模块:Intro to Thin Film Chip Resistors 产品目录绘图:RR Series Top, Side RR Series Thin Film Current Flow Thick Film Current Flow 标准包装:200 系列:RR 电阻(欧姆):5.62k 功率(瓦特):0.063W,1/16W 复合体:薄膜 特点:- 温度系数:±25ppm/°C 容差:±0.5% 封装/外壳:0603(1608 公制) 尺寸/尺寸:0.063" L x 0.031" W(1.60mm x 0.80mm) 高度:0.020"(0.50mm) 端子数:2 包装:Digi-Reel® 产品目录页面:2213 (CN2011-ZH PDF) 其它名称:RR08P5.62KDDKR
RT1206DRE07174RL 功能描述:RES 174 OHM 1/4W .5% SMD 1206 RoHS:是 类别:电阻器 >> 芯片电阻 - 表面安装 系列:RT 产品培训模块:Intro to Thin Film Chip Resistors 产品目录绘图:RR Series Top, Side RR Series Thin Film Current Flow Thick Film Current Flow 标准包装:200 系列:RR 电阻(欧姆):5.62k 功率(瓦特):0.063W,1/16W 复合体:薄膜 特点:- 温度系数:±25ppm/°C 容差:±0.5% 封装/外壳:0603(1608 公制) 尺寸/尺寸:0.063" L x 0.031" W(1.60mm x 0.80mm) 高度:0.020"(0.50mm) 端子数:2 包装:Digi-Reel® 产品目录页面:2213 (CN2011-ZH PDF) 其它名称:RR08P5.62KDDKR
RT1206DRE07178KL 功能描述:RES 178K OHM 1/4W .5% SMD 1206 RoHS:是 类别:电阻器 >> 芯片电阻 - 表面安装 系列:RT 产品培训模块:Intro to Thin Film Chip Resistors 产品目录绘图:RR Series Top, Side RR Series Thin Film Current Flow Thick Film Current Flow 标准包装:200 系列:RR 电阻(欧姆):5.62k 功率(瓦特):0.063W,1/16W 复合体:薄膜 特点:- 温度系数:±25ppm/°C 容差:±0.5% 封装/外壳:0603(1608 公制) 尺寸/尺寸:0.063" L x 0.031" W(1.60mm x 0.80mm) 高度:0.020"(0.50mm) 端子数:2 包装:Digi-Reel® 产品目录页面:2213 (CN2011-ZH PDF) 其它名称:RR08P5.62KDDKR