参数资料
| 型号： | RTP200R060SA-2 |
| 厂商： | TE Connectivity |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | RTP SURGE PROTECTOR SMD |
| RoHS指令信息： | RTP200R060SA-2 Statement of Compliance |
| 特色产品： | Reflowable Thermal Protection (RTP) Solutions |
| 标准包装： | 1 |
| 系列： | RTP |
| 保持温度@某电压条件下： | 175°C（347°F）@ 32V |
| 额定工作温度： | 401°F（205°C） |
| 封装/外壳： | 非标准型 SMD |
| 其它名称： | RTP200R060SA-2DKR |
TE Connectivity
Reflowable Thermal Protection for
Power Electronics Designs in Rugged Environments
LAYOUT RECOMMENDATIONS
Intimate thermal contact with the potential heat source is critical to achieve the desired protection performance. The RTP device should be
used so that the P TH pin shares a copper mounting pad with the primary thermal pin or heat sink of the FET or protected component. Board
layout recommendations for appropriate thermal coupling are provided below.
1. The RTP device P TH pad must be placed as close to the FET heat sink as practical.
2. Connect the P TH pad to the FET heat sink with as thick and wide a copper trace as practical.
3. Additional copper layers should NOT be placed directly underneath the P TH pad, and if possible, pull additional copper layers away from
the RTP device P TH pad. These additional copper layers work to pull heat away from the RTP device and decrease its thermal sensitivity.
4. Pull top layer “cooling” traces as far away from RTP device P TH pad as practical.
Example layout of an RTP device mounted near to a typical powerFET package on an FR4 type PCB
RTP
device
FET
pads
pads
Via to GND or TP
ARM
P TH
P 1
Note: Thermal conductivity between the RTP device and the heat source is highly dependent on board layout, heat sink structures, and relative
placement and design of co-located components. It is the responsibility of the user to verify that the RTP device provides sufficient protection
in the user ’s specific final device implementation.
te.com/RTP-Launch/
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