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| 型号： | RX1011B250Y |
| 英文描述： | Bipolar NPN UHF/Microwave Transisitor |
| 中文描述： | 双极NPN超高频/微波Transisitor |
| 文件页数： | 1/4页 |
| 文件大小： | 310K |
| 代理商： | RX1011B250Y |
RX1010
433.92 MHz ASH Receiver
RF Monolithics, Inc.
Phone: (972) 233-2903
Fax: (972) 387-8148
E-mail: info@rfm.com
http://www.rfm.com
RX1010-121198
Page 1 of 4
1998 by RF Monolithics, Inc. The stylized RFM logo and RFM are registered trademarks of RF Monolithics, Inc.
Ideal for 433.92 MHz, 3 V Receivers in Europe (I-ETS 300 220)
High-Sensitivity Passive Design with No RF Oscillation
Baseband Data Rate of 10 kbps
Simple to Apply with External Parts Count
Rugged, Surface-Mount Package with 130 mm
2
Footprint
This amplifier-sequenced hybrid (ASH) receiver is based on several leading-edge
technologies that allow outstanding performance in a small and simple-to-apply
module. Two surface-accoustic-wave (SAW) devices are employed. Front-end fil-
tering by a low-loss coupled-resonator SAW filter provides excellent selectivity.
Typical sensitivity better than -94 dBm is achieved with no RF oscillating or regener-
ative circuits. This results in virtually no RF spurious emissions. A low-loss SAW delay line provides the time delay necessary to
sequence the two RF amplifiers. Time sequencing of the RF gain eliminates the need for frequency conversion prior to AM detection.
This receiver is designed to operate from 3 V lithium battery with typically 1.3 mA current. For system design flexibility, the baseband
output is accessible, and the comparator threshold can be changed externally between two settings. Typical applications include unli-
censed wireless remote-controls, security and data-link devices operating in Europe under ETSI I-ETS 300 220.
Electrical Characteristics
Characteristic
Sym
f
C
Notes
2, 3
4, 5
Minimum
Typical
Maximum
Units
MHz
Operating Radio Frequency
Received Carrier Modulation Type
RF Band
433.92 Nominal
Pulse Modulation (OOK)
-94
Sensitivity
Operating Signal Strength
Channel Width
Input Impedance
Half-Frequency Spurious
f
C ± 1 MHz
Sample Duration
Sample Repetition Rate
Data Rate
3 dB Bandwidth
Default (Terminal 5 NC)
Override (Terminal 5
LOW)
CMOS Load Capacitance
6
dBm
-10
f
C
±200
kHz
W
Z
IN
50 Nominal
105
20
700
250
10
12
25
0
Interference Rejection
7
dB
Sequencing (Sampling)
8
ns
kHz
kb/s
kHz
Baseband
9
Comparator Threshold
10
mV
Digital Output
11
10
p
F
Output HIGH Voltage
Output LOW Voltage
Rise Time
Fall Time
Operating Voltage
Current at 25C and 3.0 V
V
OH
V
OL
t
R
t
F
V
CC
I
CC
T
A
V
CC
-0.2
0.0
V
CC
0.2
V
5
5
μ
s
Power Supply
1
2.7
3.0
1.3
3.5
1.4
+85
VDC
mA
×C
Operating Ambient Temperature
1
-40
Lid Symbolization (in addition to Lot and/or Date Codes)
RFM RX1010
SM-10 Case
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