参数资料
型号: RZR020P01TL
厂商: Rohm Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET P-CH 12V 2A TSMT3
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 105 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 1mA
闸电荷(Qg) @ Vgs: 6.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 770pF @ 6V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TSMT3
包装: 带卷 (TR)
1.5V Drive Pch MOSFET
RZR020P01
Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
(3)
(1) (2)
0.95 0.95
0~0.1
3) Small and Surface Mount Package
(TSMT3).
(1) Gate
1.9
0.16
Each lead has same dimensions
4) Low voltage drive (1.5V).
(2) Source
(3) Drain
Abbreviated symbol : ZE
Applications
Switching
Packaging specifications
Inner circuit
(3)
Package
Taping
? 2
Type
Code
Basic ordering unit (pieces)
TL
3000
(1)
? 1
RZR020P01
Absolute maximum ratings (Ta=25 ° C)
(2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 12
± 10
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
? 1
? 1
? 2
± 2
± 6
? 0.8
? 6
1.0
A
A
A
A
W
Channel temperature
Range of storage temperature
Tch
Tstg
150
? 55 to + 150
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 When mounted on a ceramic board.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a) ?
Limits
125
Unit
° C / W
? When mounted on a ceramic board.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.03 - Rev.A
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