参数资料
型号: S-80142BLPF-JE3TFGG
元件分类: 电源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
封装: LEAD FREE, SNT-4
文件页数: 4/33页
文件大小: 297K
代理商: S-80142BLPF-JE3TFGG
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL DELAY TIME SETTING)
S-801 Series
Rev.4.0_00
12
Seiko Instruments Inc.
Electrical Characteristics
Table 6
(Ta
=25 °C Unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
*1
VDET
VDET(S)
×0.98
VDET(S) VDET(S)
×1.02
V
1
Hysteresis width
VHYS
30
60
100
mV
ISS
VDD=3.5 V
S-80122 to 26
1.3
3.3
μA
Current
consumption
VDD=4.5 V
S-80127 to 39
1.5
3.5
VDD=6.5 V
S-80140 to 60
1.8
4.0
Operating voltage
VDD
0.95
10.0
V
Output current
IOUT
Output transistor,
Nch, VOUT=0.5 V
VDD=1.2 V
S-80122 to 60
0.75
1.5
mA
2
VDD=2.4 V
S-80127 to 60
3.0
6.0
VDD=4.8 V
S-80122 to 39
1.0
2.0
Only for CMOS output
products,
Output transistor,
Pch, VDD–VOUT=0.5 V
VDD=6.0 V
S-80140 to 54
1.25
2.5
VDD=8.4 V
S-80155 to 60
1.5
3.0
Leakage current
ILEAK
Only for Nch open-drain output products,
Output transistor,
Nch, VDD=10.0 V, VOUT=10.0 V
0.1
μA
Detection voltage
temperature
coefficient
*2
DET
V
Ta
V
Δ
Δ
Ta
=40 °C to +85 °C
±120
±360
ppm/
°C
1
Delay time 1
tD1
VDD=VDET+1 V, DS pin Low
S-801xxAx
32.5
50
72.5
ms
S-801xxBx
65
100
145
S-801xxCx
130
200
290
Delay time 2
tD2
VDD=VDET+1 V, DS pin High
110
220
330
μs
3
Input voltage
VSH
DS pin, VDD=6.0 V
1.0
V
4
VSL
DS pin, VDD=6.0 V
0.3
*1.
VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. Temperature change ratio for the detection voltage [mV/
°C] is calculated using the following equation.
[]
()
[]
[] 1000
C
ppm/
V
Ta
Δ
V
Δ
V
Typ.
V
C
mV/
Ta
Δ
V
Δ
DET
DET(S)
DET
÷
°
×
=
°
3
*
2
*
*1
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage value
*3. Detection voltage temperature coefficient
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