参数资料
型号: S-8338ACAA-T8T1
元件分类: 稳压器
英文描述: 0.16 A SWITCHING CONTROLLER, 1133 kHz SWITCHING FREQ-MAX, PDSO8
封装: TSSOP-8
文件页数: 9/49页
文件大小: 554K
代理商: S-8338ACAA-T8T1
STEP-UP, 1.2 MHz HIGH-FREQUENCY, PWM CONTROL SWITCHING REGULATOR CONTROLLERS
Rev.2.1_01
S-8337/8338 Series
Seiko Instruments Inc.
17
4. External transistor
A bipolar (NPN) or enhancement (N-channel) MOS FET transistor can be used as the external
capacitor.
4-1. Bipolar (NPN) type
The driving capability when the output current is increased by using a bipolar transistor is
determined by hFE and Rb of the bipolar transistor. Figure 10 shows a peripheral circuit.
Nch
Pch
Rb
VIN
IPK
EXT
Cb
2200 pF
1 k
Figure 10 External Transistor Periphery
1 k
is recommended for Rb. Actually, calculate the necessary base current (Ib) from hFE of the
bipolar transistor as follows and select an Rb value lower than this.
Ib =
hFE
IPK
Rb =
Ib
VIN – 0.7
IEXTH
0.4
A small Rb increases the output current, but the efficiency decreases. Actually, a pulsating
current flows and a voltage drop occurs due to the wiring capacitance. Determine the optimum
value by experiment.
A speed-up capacitor (Cb) connected in parallel with Rb resistance as shown in Figure 10
decreases the switching loss and improves the efficiency.
Select Cb by observing the following equation.
Cb
2
π Rb fOSC 0.7
1
However, in practice, the optimum Cb value also varies depending on the characteristics of the
bipolar transistor employed. Therefore, determine the optimum value of Cb by experiment.
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