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| 型号： | S-SY3 |
| 厂商： | Johanson Dielectrics Inc |
| 文件页数： | 18/40页 |
| 文件大小： | 0K |
| 描述： | SAFETY CAP X2Y3 MLCC KIT SMD |
| 标准包装： | 1 |
| 套件类型： | 安全系列；陶瓷 MLCC |
| 值： | 240 件 - 10pF ~ 1500pF，各 20 件 |
| 包装： | 带装箱指南的塑料箱 |
| 安装类型： | 表面贴装 |
| 包括封装： | 1808（4520 公制） |
| 产品目录页面： | 2140 (CN2011-ZH PDF) |
| 工具箱内容： | (20) 709-1261-1-ND - CAP CER 1500PF 3KV 10% X7R 1808 (20) 709-1260-1-ND - CAP CER 680PF 3KV 20% X7R 1808 (20) 709-1259-1-ND - CAP CER 470PF 3KV 20% X7R 1808 (20) 709-1258-1-ND - CAP CER 330PF 3KV 10% X7R 1808 (20) 709-1257-1-ND - CAP CER 220PF 3KV 10% NP0 1808 (20) 709-1256-1-ND - CAP CER 68PF 3KV 5% NP0 1808 (20) 709-1255-1-ND - CAP CER 47PF 3KV NP0 1808 (20) 709-1254-1-ND - CAP CER 33PF 3KV 5% NP0 1808 (20) 709-1253-1-ND - CAP CER 18PF 3KV 5% NP0 1808 (20) 709-1252-1-ND - CAP CER 10PF 3KV 10% NP0 1808 更多... |
| 其它名称： | 709-1246 S-X2Y3 |
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T ANCERAM C HIP C APACITORS
?
TANCERAM ? chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because TANCERAM ? capacitors exhibit
extremely low ESR, equivalent circuit performance can often be
achieved using considerably lower capacitance values. Low
DC leakage reduces current drain, extending the battery life of
portable products. TANCERAM ? high DC breakdown voltage
ratings offer improved reliability and eliminate large voltage
de-rating common when designing with tantalums.
A DVANTAGES
? Low ESR
? Higher Surge Voltage
? Reduced CHIP Size
? Low DC Leakage
? Non-polarized Devices
? Improved Reliability
? Higher Insulation Resistance ? Higher Ripple Current
A PPLICATIONS
? Switching Power Supply Smoothing (Input/Output)
? DC/DC Converter Smoothing (Input/Output)
H OW TO O RDER TANCERAM ?
? Backlighting Inverters
? General Digital Circuits
Part number written: 100R15X106MV4E
100
VOLTAGE
6R3 = 6.3 V
100 = 10 V
160 = 16 V
250 = 25 V
500 = 50 V
101 = 100 V
R15
SIZE
See Chart
X
DIELECTRIC
W = X7R
X = X5R
106
CAPACITANCE
1st two digits are
significant; third digit
denotes number of
zeros.
105 = 1.00 μF
476 = 47.0 μF
107 = 100 μF
M
TOLERANCE
K = ±10%
M = ±20%
V
TERMINATION
V = Nickel Barrier
with 100% Tin
Plating (Matte)
T = SnPb*
(*available on
select parts)
4
MARKING
4 = Unmarked
E
PACKING
Code Type Reel
E Plastic 7”
T Paper 7”
Tape specifications
conform to EIA
RS481
18
www.johanson dielectrics.com
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相关代理商/技术参数 |
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| SSY39L200454CB31 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| SSY39L200454CB32 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| SSY39L200454CB33 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| SSY39L200454CB3K | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
| SSY39L200454CE1 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH |
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