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参数资料
| 型号： | S07D-GS18 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.7 A, 200 V, SILICON, SIGNAL DIODE, DO-219AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMF, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 77K |
| 代理商： | S07D-GS18 |
www.vishay.com
2
Document Number 85733
Rev. 2.0, 10-Nov-09
S07B, S07D, S07G, S07J, S07M
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Note:
1) Averaged over any 20 ms period
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note:
1) Mounted on epoxy substrate with 3 mm x 3 mm CU pads (
≥ 40 mm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Note:
1) Pulse test: 300 pulse width, 1 % duty cycle
Parameter
Test condition
Part
Symbol
Value
Unit
Maximum repetitive peak reverse voltage
S07B
VRRM
100
V
S07D
VRRM
200
V
S07G
VRRM
400
V
S07J
VRRM
600
V
S07M
VRRM
1000
V
Maximum RMS voltage
S07B
VRMS
70
V
S07D
VRMS
140
V
S07G
VRMS
280
V
S07J
VRMS
420
V
S07M
VRMS
700
V
Maximum DC blocking voltage
S07B
VDC
100
V
S07D
VDC
200
V
S07G
VDC
400
V
S07J
VDC
600
V
S07M
VDC
1000
V
Maximum average forward rectified current
Ttp = 75 °C
1)
IF(AV)
1.5
A
TA = 65 °C
1)
IF(AV)
0.7
A
Peak forward surge current 8.3 ms single
half sine-wave
TL = 25 °C
IFSM
25
A
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air 1)
RthJA
180
K/W
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 150
°C
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Maximum instantaneous
forward voltage
1 A 1)
VF
1.1
V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
IR
10
μA
TA = 125 °C
IR
50
μA
Reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
1.8
μs
Typical capacitance at 4 V, MHz
Cj
4pF
相关PDF资料 |
PDF描述 |
|---|---|
| S07G-GS08 | 0.7 A, 400 V, SILICON, SIGNAL DIODE, DO-219AB |
| S07J-GS08 | 0.7 A, 600 V, SILICON, SIGNAL DIODE, DO-219AB |
| S07G-GS18 | 0.7 A, 400 V, SILICON, SIGNAL DIODE, DO-219AB |
| S07M-GS18 | 0.7 A, 1000 V, SILICON, SIGNAL DIODE, DO-219AB |
| S07D-M-08 | 0.7 A, 200 V, SILICON, SIGNAL DIODE, DO-219AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S07D-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:SURFACE MOUNT SILICON RECTIFIERS |
| S07D-M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Switching Diode, High Voltage |
| S07DSB | 制造商:CHENDA 制造商全称:Chendahang Electronics Co., Ltd 功能描述:SU RFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER |
| S07G | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Surface Mount Diodes |
| S07G-GS08 | 功能描述:二极管 - 通用，功率，开关 0.7 Amp 400 Volt 1.8uS RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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