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参数资料
| 型号： | S10B |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封装： | SMCJ, MODIFIED DO-214AB, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 40K |
| 代理商： | S10B |
MSC0923.PDF
21201 Itasca St.
Chatsworth, Ca 91311
Phone: (818) 701-4933
Fax:
(818) 701-4939
S10A
THRU
S10M
10 Amp
Silicon Rectifier
50 to 1000 Volts
DO-214AB (Modified)
SMCJ Type
Features
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250
°C for 10 Seconds At Terminals
High Current Capability
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.210
.214
5.33
5.43
B
.199
.203
5.05
5.15
C
.004
.008
.10
.20
D
---
.02
---
.51
E
.063
.067
1.60
1.70
F
.175
.179
4.45
4.55
G
.318
.322
8.08
8.18
H
.239
.243
6.08
6.18
J
.234
.256
5.95
6.05
Maximum Ratings
Operating Temperature: -55
°C to +150°C
Storage Temperature: -55
°C to +150°C
Maximum Thermal Resistance; 8
°C/W Junction To Lead
Microsemi
Part
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
S10A
50V
35V
50V
S10B
100V
70V
100V
S10D
200V
140V
200V
S10G
400V
280V
400V
S10J
600V
420V
600V
S10K
800V
560V
800V
S10M
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
10.0A
TJ = 75
°C
Peak Forward Surge
Current
IFSM
400A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
1.20V
IFM = 10.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
10
A
250
A
TJ = 25
°C
TJ = 125
°C
Typical Junction
Capacitance
CJ
200pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200
sec, Duty cycle 2%
Santa Ana: (714) 979-8220 Scottsdale: (602) 941-6300 Colorado: (303) 469-2161 Watertown: (617) 926-0404 Chatsworth: (818) 701-4933
Sertech Labs: (617) 924-9280 Ireland: (353) 65-40044 Bombay: (91) 22-832-002 Hong Kong: (852) 2692-1202
0.070”
0.190
0.200”
SUGGESTED SOLDER
PAD LAYOUT
H
J
E
F
G
A
B
D
C
Cathode Band
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相关代理商/技术参数 |
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|---|---|
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