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参数资料
| 型号： | S1226-18BU |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | TO-18, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 91K |
| 代理商： | S1226-18BU |
Si photodiode
S1226-18BU, S1336-18BU
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2004 Hamamatsu Photonics K.K.
Cat. No. KSPD1037E02
Jul. 2004 DN
14
a
3.6
±
0.2
2.54 ± 0.2
CONNECTED TO CASE
WINDOW
3.0 ± 0.2
4.7 ± 0.1
5.4 ± 0.2
0.45
LEAD
a
S1226-18BU
S1336-18BU
2.4
2.3
The UV glass may extend a maximum of 0.1 mm
above the upper surface of the cap.
0.1
0
190
400
600
800
1000
0.3
0.2
(Typ. Ta=25 C)
0.4
0.5
0.6
0.7
PHOTO
SENSITIVITY
(A/W)
WAVELENGTH (nm)
S1226-18BU
S1336-18BU
s Spectral response
KSPDB0136EA
TEMPERATURE
COEFFICIENT
(%/
C)
WAVELENGTH (nm)
(Typ. )
0
190
400
600
800
1000
+1.0
+0.5
+1.5
-0.5
S1226-18BU
S1336-18BU
KSPDB0137EA
RISE
TIME
LOAD RESISTANCE (
)
(Typ. Ta
=25 C, VR=0 V)
102
10 ns
103
104
105
S1226-18BU
S1336-18BU
100 ns
1
s
10
s
100
s
1 ms
DARK
CURRENT
REVERSE VOLTAGE (V)
(Typ. Ta
=25 C)
0.01
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
10 nA
S1336-18BU
S1226-18BU
SHUNT
RESISTANCE
AMBIENT TEMPERATURE (C)
(Typ. VR
=10 mV)
20
0
204060
80
10 k
100 k
1 M
10 M
100 M
1 G
10 G
100 G
1 T
S1226-18BU
S1336-18BU
KSPDB0138EA
KSPDB0139EB
KSPDB0140EA
KSPDA0126EA
s Photo sensitivity temperature characteristic
s Dark current vs. reverse voltage
s Rise time vs. load resistance
s Dimensional outline (unit: mm)
s Shunt resistance vs. ambient temperature
2
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