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参数资料
| 型号： | S1227-66BR |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 1/4页 |
| 文件大小： | 145K |
| 代理商： | S1227-66BR |
Features
l High UV sensitivity: QE 75 % (λ=200 nm)
l Suppressed IR sensitivity
l Low dark current
Applications
l Analytical equipment
l Optical measurement equipment, etc.
PHOTODIODE
Si photodiode
For UV to visible, precision photometry; suppressed IR sensitivity
S1227 series
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Package
Active
area size
Effective
active area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm
2)
(V)
(°C)
S1227-16BQ
/Q
S1227-16BR
/R
2.7 × 15
1.1 × 5.9
5.9
S1227-33BQ
/Q
S1227-33BR
/R
6 × 7.6
2.4 × 2.4
5.7
S1227-66BQ
/Q
S1227-66BR
/R
8.9 × 10.1
5.8 × 5.8
33
S1227-1010BQ
/Q
S1227-1010BR
/R
15 × 16.5
10 × 10
100
5
-20 to +60
-20 to +80
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100 lx
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
200 nm
He-Ne
Laser
Min. Typ.
Dark
current
ID
VR=10 m V
Max.
Temp.
coefficient
TCID
Rise
time
tr
VR=0 V
RL=1 k
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
V R=10 m V
(G
)
NEP
Type No.
(nm)
Min. Typ. 633 nm (A) (A)
(pA)
(times/° C)
(s)
(pF)
Min. Typ. (W/Hz1/2)
S1227-16BQ
190 to 1000
0.36 0.10 0.12
0.34
2
3.2
2.5 × 10
-15
S1227-16BR
320 to 1000
0.43
-
0.39
2.2
3.7
5
0.5
170
2
20
2.1 × 10
-15
S1227-33BQ
190 to 1000
0.36 0.10 0.12
0.34
2
3.0
2.5 × 10
-15
S1227-33BR
320 to 1000
0.43
-
0.39
2.2
3.7
5
0.5
160
2
20
2.1 × 10
-15
S1227-66BQ
190 to 1000
0.36 0.10 0.12
0.34
11
16
5.0 × 10
-15
S1227-66BR
320 to 1000
0.43
-
0.39
13
19
20
2
950
0.5
5
4.2 × 10
-15
S1227-1010BQ 190 to 1000
0.36 0.10 0.12
0.34
32
44
8.0 × 10
-15
S1227-1010BR 320 to 1000
720
0.43
-
0.39
36
53
50
1.12
7
3000
0.2
2
6.7 × 10
-15
* Window material Q: quartz glass, R: resin coating
1
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