参数资料
型号: S1240
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 126 A, SILICON, RECTIFIER DIODE, TO-244
封装: TO-244, 2 PIN
文件页数: 1/6页
文件大小: 216K
代理商: S1240
1
Case Styles
S1240
TO-244
S1240
Bulletin PD-20015 02/01
Features
Description/ Applications
Absolute Maximum Ratings
HEXFRED TM
Reduced RFI and EMI
ReducedSnubbing
ExtensiveCharacterizationof
RecoveryParameters
Ultrafast, Soft Recovery Diode
VR = 600V
VF(typ.)! = 1.2V
IF(AV) = 140A
Qrr (typ.) = 340nC
IRRM(typ.) = 8.5A
trr(typ.) = 33ns
di(rec)M/dt (typ.)! = 220A/s
BASE COMMON CATHODE
LUG
TERMINAL
ANODE 1
LUG
TERMINAL
ANODE 2
HEXFRED
TM diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
VR
Cathode-to-Anode Voltage
600
V
IF @ TC = 25°C
Continuous Forward Current
126
A
IF @ TC = 100°C
Continuous Forward Current
63
IFSM
Single Pulse Forward Current "
400
EAS
Non-Repetitive Avalanche Energy #
220
J
PD @ TC = 25°C
Maximum Power Dissipation
310
W
PD @ TC = 100°C Maximum Power Dissipation
125
TJ, TSTG
Operating Junction and Storage Temperature Range
- 55 to 150
°C
Parameters
Max
Units
www.irf.com
"
Limited by junction temperature
#
L = 100H, duty cycle limited by max TJ
!
125°C
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