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参数资料
| 型号： | S1242 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 321 A, SILICON, RECTIFIER DIODE, TO-244 |
| 封装： | TO-244, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 211K |
| 代理商： | S1242 |
1
Case Styles
S1242
TO-244
S1242
Bulletin PD-20017 02/01
Features
Description/ Applications
Absolute Maximum Ratings
HEXFRED TM
Reduced RFI and EMI
ReducedSnubbing
ExtensiveCharacterizationof
RecoveryParameters
Ultrafast, Soft Recovery Diode
VR = 400V
VF(typ.)! = 1V
IF(AV) = 320A
Qrr (typ.) = 420nC
IRRM(typ.) = 8.7A
trr(typ.) = 45ns
di(rec)M/dt (typ.)! = 280A/s
BASE COMMON CATHODE
LUG
TERMINAL
ANODE 1
LUG
TERMINAL
ANODE 2
HEXFRED
TM diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
VR
Cathode-to-Anode Voltage
400
V
IF @ TC = 25°C
Continuous Forward Current
321
A
IF @ TC = 100°C
Continuous Forward Current
160
IFSM
Single Pulse Forward Current "
1200
EAS
Non-Repetitive Avalanche Energy #
1.4
mJ
PD @ TC = 25°C
Maximum Power Dissipation
625
W
PD @ TC = 100°C Maximum Power Dissipation
250
TJ, TSTG
Operating Junction and Storage Temperature Range
- 55 to 150
°C
Parameters
Max
Units
www.irf.com
"
Limited by junction temperature
#
L = 100H, duty cycle limited by max TJ
!
125°C
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相关代理商/技术参数 |
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