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参数资料
| 型号： | S1337-16BR |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 1/4页 |
| 文件大小： | 135K |
| 代理商： | S1337-16BR |
S1337 series
Features
l High UV sensitivity: QE 75 % (λ=200 nm)
l Low capacitance
Applications
l Analytical equipment
l Optical measurement equipment
PHOTODIODE
Si photodiode
For UV to IR, precision photometry
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Package
Active area
size
Effective active
area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm
2)
(V)
(°C)
S1337-16BQ
/Q
S1337-16BR
/R
2.7 × 15
1.1 × 5.9
5.9
S1337-33BQ
/Q
S1337-33BR
/R
6 × 7.6
2.4 × 2.4
5.7
S1337-66BQ
/Q
S1337-66BR
/R
8.9 × 10.1
5.8 × 5.8
33
S1337-1010BQ
/Q
S1337-1010BR
/R
15 × 16.5
10 × 10
100
5
-20 to +60
-20 to +80
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100 lx
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
λp 200 nm
He-Ne
laser
GaAs
LE D Min. Typ.
Dark
current
ID
VR=10 m V
Max.
Te m p.
coefficient
of
ID
TCID
Ris e ti m e
tr
V R=0 V
R L =1 k
Ter minal
capacitance
Ct
V R=0 V
f= 10 k H z
Shunt
resistance
Rsh
VR=10 m V
NEP
Type No.
(nm)
Min. Typ.
633
nm
930
nm (A) (A)
(pA)
(times/° C)
(s)
(pF)
Min.
(G
)
Typ.
(G
) (W/Hz1/2)
S1337-16BQ
190 to 1100
0.5 0.10 0.12 0.33 0.5
4.0
5.3
1.0 × 10
-14
S1337-16BR
320 to 1100
0.62
-
0.4 0.6
4.4
6.2
50
0.2
65
0.2 0.6
8.4 × 10
-15
S1337-33BQ
190 to 1100
0.5 0.10 0.12 0.33 0.5
4.0
5.0
8.1 × 10
-15
S1337-33BR
320 to 1100
0.62
-
0.4 0.6
4.4
6.2
30
0.2
65
0.3 1
6.5 × 10
-15
S1337-66BQ
190 to 1100
0.5 0.10 0.12 0.33 0.5
20
27
1.3 × 10
-14
S1337-66BR
320 to 1100
0.62
-
0.4 0.6
22
33
100
1
380
0.1 0.4
1.0 × 10
-14
S1337-1010BQ 190 to 1100
0.5 0.10 0.12 0.33 0.5
65
78
1.8 × 10
-14
S1337-1010BR 320 to 1100
960
0.62
-
0.4 0.6
70
95
200
1.15
3
1100
0.05 0.2
1.5 × 10
-14
* Window material Q: quartz glass, R: resin coating
1
相关PDF资料 |
PDF描述 |
|---|---|
| S1337-33BQ | PHOTO DIODE |
| S1337-33BR | PHOTO DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S1337-33BQ | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-33BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-66BQ | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-66BR | 制造商:Hamamatsu Photonics 功能描述:Bulk |
| S1338 | 制造商:LAPP/CONTACT CONNECTORS 功能描述:SLN FLEX 9(3/8 IN) SKINTOP GREY |
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