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参数资料
| 型号： | S153P |
| 厂商： | VISHAY TELEFUNKEN |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | HERMETIC SEALED, TO-5, 2 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 92K |
| 代理商： | S153P |
S153P
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.com
Document Number 81535
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
IR = 100 mA, E = 0
V(BR)
50
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2
30
nA
Diode Capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
75
pF
VR = 3 V, f = 1 MHz, E = 0
CD
25
40
pF
Open Circuit Voltage
EA = 1 klx
Vo
350
mV
Temp. Coefficient of Vo
EA = 1 klx
TKVo
–2.6
mV/K
Short Circuit Current
EA = 1 klx
Ik
80
mA
Ee = 1 mW/cm2,
l = 950 nm
Ik
47
mA
Temp. Coefficient of Ik
EA = 1 klx
TKIk
0.18
%/K
Reverse Light Current
EA = 1 klx, VR = 5 V
Ira
85
mA
g
Ee = 1 mW/cm2,
l = 950 nm, VR = 5 V
Ira
40
50
mA
Absolute Spectral Sensitivity
VR = 5 V, l = 900 nm
s(
l)
0.6
A/W
Angle of Half Sensitivity
±55
deg
Wavelength of Peak Sensitivity
lp
900
nm
Range of Spectral Bandwidth
l0.5
600...1050
nm
Noise Equivalent Power
VR = 10 V, l = 950 nm
NEP
4.2x10–14
W/
√ Hz
Rise Time
VR = 10 V, RL = 1 kW,
l = 820 nm
tr
100
ns
Fall Time
VR = 10 V, RL = 1 kW,
l = 820 nm
tf
100
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
40
60
80
120
100
20
I
–
Reverse
Dark
Current
(
nA
)
ro
Tamb – Ambient Temperature ( °C )
94 8463
100
101
102
103
104
105
VR=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0.8
1.0
1.2
1.5
1.3
1.4
1.1
0.9
0
2040
6080
120
100
I
–
Relative
Reverse
Light
Current
ra
rel
Tamb – Ambient Temperature ( °C )
94 8464
VR=5V
l=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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