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参数资料
| 型号： | S16ASD2 |
| 厂商： | DIOTEC SEMICONDUCTOR AG |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 110K |
| 代理商： | S16ASD2 |
S16ASD2 ... S16MSD2
S16ASD2 ... S16MSD2
Surface Mount Si-Rectifiers – Half Bridge
Si-Gleichrichter für die Oberflchenmontage– Halbbrücke
Version 2010-03-31
Dimensions - Mae [mm]
Nominal current
Nennstrom
16 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...1000 V
Plastic case
Kunststoffgehuse
TO-263AB
D2PAK
Weight approx.
Gewicht ca.
1.6 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
Surge peak reverse voltage
Stospitzensperrspannung
VRSM [V] 1)
Forward voltage
Durchlass-Spannung
IF = 5 A
IF = 8 A
S16ASD2
50
< 1.0
< 1.1
S16BSD2
100
< 1.0
< 1.1
S16DSD2
200
< 1.0
< 1.1
S16GSD2
400
< 1.0
< 1.1
S16JSD2
600
< 1.0
< 1.1
S16KSD2
800
< 1.0
< 1.1
S16MSD2
1000
< 1.0
< 1.1
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
TC = 100°C
IFAV
8 A 1)
16 A 2)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 3)
Peak forward surge current, 50/60 Hz half sine-wave
Stostrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
135/150 A 1)
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
90 A2s 1)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
1
Per diode – Pro Diode
2
Output current when operating two devices in a full bridge configuration
Ausgangsstrom bei Betrieb zweier Bauteile als Vollbrücke
3
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehuses TC = 100°C
Diotec Semiconductor AG
http://www.diotec.com/
1
2
3
4
0.4
4.5
0.2
±
1.2
5.08
0.8
1.3
10.25
-0.1
1
Type
Typ
3
2
4
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