参数资料
型号: S1A
厂商: Fairchild Semiconductor
文件页数: 2/5页
文件大小: 169K
描述: DIODE GEN PURPOSE 50V 1A SMA
产品目录绘图: SOD-123; SMB; SMA; SMC
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 1A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 1.8µs
电流 - 在 Vr 时反向漏电: 1µA @ 50V
电容@ Vr, F: 12pF @ 4V,1MHz
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: SMA
包装: 标准包装
产品目录页面: 1611 (CN2011-ZH PDF)
其它名称: S1AFSDKR
S1A - S1M — General Purpose Rectifiers
? 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
S1A - S1M Rev. 1.1.2 2
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
Notes:
2. Device mounted on FR-4 PCB, land pattern size: 25 mm2 (5 x 5 mm).
3. Device mounted on FR-4 PCB, land pattern size: 4.6375 mm2 (2.65 x 1.75 mm).
Electrical Characteristics
Values are at
TA
= 25°C unless otherwise noted
.
Symbol Parameter
Value
Units
1A 1B 1D 1G 1J 1K 1M
VRRM
Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
IF(AV)
Average Rectified Forward Current at
TA
= 100
°C
1.0 A
IFSM
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30 A
TSTG
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature -55 to +150
°C
Symbol Parameter Max. Units
PD
Power Dissipation 1.4 W
RθJA
Thermal Resistance, Junction to Ambient(2)
85
°C/W
RθJA
Thermal Resistance, Junction to Ambient(3)
170
°C/W
Ψjl
Junction-Lead thermal characteristics(3)
25
°C/W
Symbol Parameter Test Condition Typ. Max. Units
VF
Forward Voltage IF = 1.0 A 1.1 V
trr
Reverse Recovery Time
IF
= 0.5 A,
IR
= 1.0 A,
Irr
= 0.25 A
1.8
μs
IR
Reverse Current at Rated VR
TA = 25°C1.0μA
TA =125°C50μA
CTJunction Capacitance
VR = 4.0 V,
f = 1.0MHz
6.6 pF
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