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| 型号： | S1B-HE3/61T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 87K |
| 代理商： | S1B-HE3/61T |
S1A thru S1M
Vishay General Semiconductor
Document Number: 88711
Revision: 07-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Glass Passivated Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
general
purpose
rectification
of
power
supplies,
inverters,
converters
and
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
40 A, 30 A
EAS
5 mJ
IR
1.0 A, 5.0 A
VF
1.1 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
EAS
5mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| S1G-E3/61T | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1K-E3/5AT | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1G-HE3/61T | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1A-HE3/61T | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1B-E3/5AT | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S1BL | 功能描述:整流器 1A 100V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1B-L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:1 Amp Silicon Rectifier 50 to 1000 Volts |
| S1BL R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 1.5A 2-Pin Sub SMA T/R |
| S1B-LTP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 100V 1A 2-Pin SMB T/R |
| S1B-M3/5AT | 制造商:Vishay Semiconductors 功能描述:1A,100V,SMRECTIFIER |
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