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参数资料
| 型号： | S1B |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA |
| 封装： | PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 899K |
| 代理商： | S1B |
1 Amp
Silicon Rectifier
50 to 1000 Volts
Features
Maximum Ratings
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
current
IF(AV)
1.0A
TJ = 100
°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine,
Maximum
Instantaneous
Forward Voltage
VF
1.1V
IFM = 1.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5
A
50
A
TJ = 25
°C
TJ = 125
°C
Typical Junction
Capacitance
CJ
12pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 2%
DO-214AA
(SMBJ) (Round Lead)
H
J
E
F
G
A
B
D
C
Cathode Band
S1A
THRU
S1M
Operating Temperature: -55
°C to +150°C
Storage Temperature: -55
°C to +150°C
Maximum Thermal Resistance; 30
°C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
S1A
50V
35V
50V
S1B
100V
70V
100V
S1D
200V
140V
200V
S1G
400V
280V
400V
S1J
600V
420V
600V
S1K
800V
560V
800V
S1M
1000V
700V
1000V
0.070”
0.090"
0.085”
SUGGESTED SOLDER
PAD LAYOUT
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.078
.116
1.98
2.95
B
.075
.089
1.90
2.25
C
.002
.008
.05
.20
D
-----
.02
-----
.51
E
.035
.055
.90
1.40
F
.065
.091
1.65
2.32
G
.205
.224
5.21
5.69
H
.160
.180
4.06
4.57
J
.130
.155
3.30
3.94
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 5
2006/05/29
Maximum Reverse
Recovery Time
Trr
2.0
s IF = 0.5A;IR = 1.0A;
Irr = 0.25A;
TM
Micro Commercial Components
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 260
°C for 10 Seconds At Terminals
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 4
相关PDF资料 |
PDF描述 |
|---|---|
| S1AP | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1MP | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1A | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1J | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1KP | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S-1B | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述:30V 50000(@BIv) / 25000(dCIv) bL +85 -30 Bulk |
| S1-B | 制造商:Multi-Contact 功能描述: |
| S1B R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R |
| S1B | 制造商:Vishay Semiconductors 功能描述:DIODE SMD 1.0A 100V |
| S1B/11T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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