参数资料
型号: S1BA-E3/5AT
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
封装: ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件页数: 3/4页
文件大小: 81K
代理商: S1BA-E3/5AT
Document Number: 88968
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
S1BA thru S1MA
Vishay General Semiconductor
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
100
10
20
30
40
50
60
70
80
90
100
1
0.1
0.01
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e
Curr
ent
(μA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
100
10
1
0.1
Reverse Voltage (V)
Junction
Capacitanc
e
(pF)
100
10
1
0.1
10
1
0.01
1000
100
t - Pulse Duration (s)
T
ran
s
ient
Thermal
Impedance
(°C/W)
Junction to Ambient
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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