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参数资料
| 型号： | S1BB-7 |
| 厂商： | DIODES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE |
| 封装： | PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 85K |
| 代理商： | S1BB-7 |
DS16003 Rev. 8 - 2
1 of 2
S1A/B - S1M/B
S1A/B - S1M/B
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Glass Passivated Die Construction
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
S1
A/AB
S1
B/BB
S1
D/DB
S1
G/GB
S1
J/JB
S1
K/KB
S1
M/MB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TT = 100
°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
30
A
Forward Voltage
@ IF = 1.0A
VFM
1.1
V
Peak Reverse Leakage Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 125
°C
IRM
5.0
100
mA
Typical Total Capacitance
(Note 1)
CT
10
pF
Typical Thermal Resistance, Junction to Terminal (Note 2)
RqJT
30
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
A, B, D, G, J, K, M Suffix Designates SMA Package
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
Mechanical Data
Case: Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Marking: Type Number, See Page 2
Ordering Information: See Page 2
SMA
SMB
Dim
Min
Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.01
2.62
2.00
2.62
All Dimensions in mm
A
B
C
D
G
H
E
J
相关PDF资料 |
PDF描述 |
|---|---|
| S1GB-7 | 1 A, 400 V, SILICON, SIGNAL DIODE |
| S1MB-7 | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| S1J-7 | 1 A, 600 V, SILICON, SIGNAL DIODE |
| S1D-7 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| S1G-7 | 1 A, 400 V, SILICON, SIGNAL DIODE |
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| S1B-CUT TAPE | 制造商:Fairchild 功能描述:S1B Series 1.1 V 1 A 100 V Max Reverse Voltage Standard Rectifier-DO-214AC |
| S1B-E3/11T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1B-E3/1T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1B-E3/2GT | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1B-E3/51T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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