参数资料
型号: S1BHE3/61T
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 79K
描述: DIODE GPP 1A 100V SMA DO-214AC
标准包装: 1,800
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 1A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 1.8µs
电流 - 在 Vr 时反向漏电: 1µA @ 100V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 带卷 (TR)
‘lllvVISHAYQV
Instantaneous Reverse Leakage
Instantaneous Fonivard Current (A)
Current (uA)
www.vishay.com
100
3
Pulse Width : 300 us1 “ii Duty Cycle
0.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Fonivard Characteristics
10
:3
0.01
Percent ol Rated Peak Reverse Voltage (%)
Fig. A - Typical Reverse Leakage Characteristics
S1A, S1 B, S1 D, S1G, S1J, S1 K, S1M
Vishay General Semiconductor
PACKAGE OUTLINE DIMENsIoNs in inches (miiiimeters)
Do-214Ac (SMA)
Cathode Band
u.us5 (1.65u.u4e (1.25
l u177(4 su)
u1s7(3 99)
u.u90 (2.29)U.U78 (1.93)
0.060 (1 52)uses (u 76] ' ' 0 uua (0 2u3)U (0)0 m4 (4 93)
0 208 (5 28)
Revision: 19-Aug-13
For technical questions within your region: Diog§sArnericas@vishay.corn, DiogesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishg1.99m)d9c?9100!!
u u12 (u 305)
u uus(u1s2)3Junction Capacitance (pF)
1 000
Transient Thermal Impedance (QC/W)
too
to
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Units Mounted on
0.20" x 0 20“ (5.0 mm x 5.0 mm)
x 0.5 Mll. inches (0.013 mm)
I Thlck Copper Land Areas
10 100
t - Pulse Duration (S)
Fig. 6 - Typical Transient Therrnal Impedance
uuse (1.68)
MlN
Mounting Pad Layout
0 074 (1.88)
MAX
0 090 (I 52)
MWu 2ua (5 25)
REFDocument Number: 88711
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