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| 型号： | S1D-M3/61T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 75K |
| 代理商： | S1D-M3/61T |
Document Number: 89272
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Rectifier
S1A thru S1M
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
40 A, 30 A
EAS
5 mJ
IR
1.0 μA, 5.0 μA
VF
1.1 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
EAS
5mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S1DR | 制造商:Panduit Corp 功能描述:D-RING KIT FOR FULL LENGTH POU BRACKET |
| S1DS | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:1.0 AMP. Surface Mount Rectifiers |
| S1D-T1 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| S1D-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| S1DTR | 功能描述:DIODE GEN PURP 200V 1A SMA 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:有效 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:200V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:1.1V @ 1A 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间（trr）:2.5μs 不同?Vr 时的电流 - 反向漏电流:5μA @ 200V 不同?Vr，F 时的电容:15pF @ 4V，1MHz 安装类型:表面贴装 封装/外壳:DO-214AC，SMA 供应商器件封装:SMA（DO-214AC） 工作温度 - 结:-65°C ~ 175°C 标准包装:1 |
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