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| 型号： | S1PD-HE3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
| 封装： | LEAD FREE, PLASTIC, SMP, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 325K |
| 代理商： | S1PD-HE3 |
S1PB thru S1PJ
Document Number 88917
10-Nov-05
Vishay General Semiconductor
www.vishay.com
1
DO-220AA (SMP)
New Product
High Current Density Surface Mount
Glass-Passivated Rectifiers
Major Ratings and Characteristics
IF(AV)
1 A
VRRM
100 V, 200 V, 400 V, 600 V
IR
1 A
VF
0.95 V
Tj max.
150 °C
Features
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low thermal resistance
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applica-
tions.
Mechanical Data
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Maximum Ratings
(TA = 25 °C unless otherwise specified)
Parameter
Symbol
S1PB
S1PD
S1PG
S1PJ
Unit
Device marking code
SB
SD
SG
SJ
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
V
Maximum average forward rectified current see Fig. 1
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Operating junction temperature
TJ
150
°C
Storage temperature
TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| S1PJ-HE3/85A | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PG-HE3/84A | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PB-HE3/85A | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PG-HE3/85A | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PK-HE3/84A | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-220AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S1PDHE3/84A | 功能描述:整流器 200 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1PDHE3/85A | 功能描述:整流器 200 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1PDHM3/84A | 功能描述:整流器 200volt 1.0amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1PDHM3/85A | 功能描述:整流器 200volt 1.0amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| S1PD-M3/84A | 功能描述:二极管 - 通用，功率，开关 200volt 1.0amp RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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