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参数资料
型号： S1PG-M3/84A
厂商： Vishay General Semiconductor
文件页数： 2/3页
文件大小： 83K
描述： DIODE GPP 1A 400V SMP
产品目录绘图： SMP Top
标准包装： 1
系列： eSMP™
二极管类型： 标准
电压 - (Vr)（最大）： 400V
电流 - 平均整流 (Io)： 1A
电压 - 在 If 时为正向 (Vf)（最大）： 1.1V @ 1A
速度： 标准恢复 >500ns，> 200mA（Io）
反向恢复时间(trr)： 1.8µs
电流 - 在 Vr 时反向漏电： 1µA @ 400V
安装类型： 表面贴装
封装/外壳： DO-220AA
供应商设备封装： DO-220AA（SMP）
包装： 标准包装
其它名称： S1PG-M3/84AGIDKR
VFSHAR _ 7 Www'V'Shay'C°m Vishay General Semiconductor
ELEOTRIOAL OHARAOTERISTIOS (TA = 25 0c unless otherwise noted)
Max. instantaneous
forward voltageMax. reverse current Rated VR E
Typical reverse recovery time :F _ g'g5AA|R : 1'0 A’
rr — -
Typical junction capacitance time 4.0 V, 1 MHZN otes
(1) Pulse test: 300 Us pulse width, 1 % duty cycle
(2) Pulse test: Pulse width S 40 msTHERMAL cHARAcTERIsTIcs (TA = 25 Dc unless othenwise noted)
@E
I??
E
Typical thermal resistance
N ate(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. REJL is
measured at the terminal of cathode band. RQJC is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE coDE BASE QUANTITY
S1 PJ-M3/BAAs1PJeMs/85A S
S1 PJHM3/84A 1”
S1 PJHM3/85A(‘)Note(1) Automotive grade
RATINGS AND cHARAcTERIsTIcs cuRvEs (TA = 25 0C unless otherwise noted)
1.2
12§§ 1.0 1 U3 5I0
3 0.5 § 0 E
5 T)g 0.6 3 U 6E D.to orE 0.4 8‘ 0 43 TL Measured E,>at the Cathode Band Term) <(g 0.2 0 20)>0 0
ED 00 100 110 120 130 140 150 0 U 2 0.4 0.6 0.5 10 12
Lead Temperature (°C) Average Forward Current
Fig 1 _ MaX_ Forward current Derating curve Fig. 2 - Forward Power Loss Characteristics
Revision: 14-Aug-13 2 Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiOdesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.comzdoo?9100o
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